End of Life April-2020 - Alternative Device: VSMY2890RGX01, VSMY2890GX01 VSMF2890RGX01, VSMF2890GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH VSMF2890RGX01 VSMF2890GX01 FEATURES Package type: surface-mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified Peak wavelength: = 890 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 12 Low forward voltage Suitable for high pulse current operation Terminal configurations: gullwing or reserve gullwing DESCRIPTION Package matches with detector VEMD2000X01 series VSMF2890RG(G)X01 series are infrared, 890 nm emitting Floor life: 4 weeks, MSL 2a, according to J-STD-020 diodes in GaAlAs (DH) technology with high radiant power Material categorization: for definitions of compliance and high speed, molded in clear, untinted plastic packages please see www.vishay.com/doc 99912 (with lens) for surface mounting (SMD). APPLICATIONS IrDA compatible data transmission 3D TV Miniature light barrier Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMF2890RGX01 40 12 890 30 VSMF2890GX01 40 12 890 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMF2890RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMF2890GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.2, 30-Sep-2019 Document Number: 85163 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life April-2020 - Alternative Device: VSMY2890RGX01, VSMY2890GX01 VSMF2890RGX01, VSMF2890GX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 9, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient J-STD-051, leads 7 mm, soldered on PCB R 250 K/W thJA 120 180 160 100 140 120 80 100 60 80 R = 250 K/W thJA R = 250 K/W thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21343 21344 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.25 1.4 1.6 V F p F Forward voltage I = 1 A, t = 100 s V -2.3 - V F p F I = 1 mA TK --1.8 - mV/K F VF Temperature coefficient of V F I = 100 mA TK --1.1 - mV/K F VF Reverse current V = 5 V I -10A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C - 125 - pF R J I = 100 mA, t = 20 ms I 20 40 60 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I - 350 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -40- mW F p e Temperature coefficient of I = 100 mA TK - -0.35 - %/K e F e Angle of half intensity - 12 - deg Peak wavelength I = 30 mA 870 890 910 nm F p Spectral bandwidth I = 30 mA -40- nm F Temperature coefficient of I = 30 mA TK -0.25 - nm/K p F p Rise time I = 100 mA, 20 % to 80 % t -30- ns F r Fall time I = 100 mA, 20 % to 80 % t -30- ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f -12- MHz DC AC c Virtual source diameter d - 1.5 - mm Rev. 1.2, 30-Sep-2019 Document Number: 85163 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F