VSMY2853SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface-mount Package form: side view Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 Peak wavelength: = 850 nm p High reliability High radiant power Very high radiant intensity Angle of half intensity: = 28 DESCRIPTION TM Suitable for high pulse current operation As part of the SurfLight portfolio, the VSMY2853SL is an infrared, 850 nm, side looking emitting diode based on Package matches with detector VEMD2xx3SLX01 and GaAlAs surface emitter chip technology with extreme high VEMT2xx3SLX01 series radiant intensities, high optical power and high speed, Floor life: 4 weeks, MSL 2a, according to J-STD-020 molded in clear, untinted plastic packages (with lens) for Material categorization: for definitions of compliance surface mounting (SMD). please see www.vishay.com/doc 99912 APPLICATIONS Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR touch panels IR illumination PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMY2853SL 50 28 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2853SL Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note MOQ: minimum order quantity Rev. 1.2, 31-Jul-2018 Document Number: 83481 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY2853SL www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature Accordung to Fig. 7, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient EIA / JESD51 R 250 K/W thJA 120 200 180 100 160 140 80 120 60 100 R = 250 K/W thJA 80 R = 250 K/W thJA 40 60 40 20 20 0 0 0 10 203040 50607080 90 100 0 1020 3040506070 8090 100 T - Ambient Temperature (C) 21890 21891 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V -1.6 1.9 V F p F Forward voltage I = 1 A, t = 100 s V -2.8 - V F p F Temperature coefficient of V I = 100 mA TK --1.5 - mV/K F F VF Reverse current I Not designed for reverse operation A R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -50- pF R J I = 100 mA, t = 20 ms I 27 50 75 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I - 350 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -55- mW F p e Temperature coefficient of radiant I = 100 mA TK --0.12 - %/K F e power Angle of half intensity - 28 - deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA -30- nm F Temperature coefficient of I = 30 mA TK -0.25- nm/K p F p Rise time I = 100 mA, 10 % to 90 % t -10- ns F r Fall time I = 100 mA, 10 % to 90 % t -10- ns F f Rev. 1.2, 31-Jul-2018 Document Number: 83481 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F