X-On Electronics has gained recognition as a prominent supplier of VSMY2853SL Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. VSMY2853SL Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

VSMY2853SL Vishay

VSMY2853SL electronic component of Vishay
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Part No.VSMY2853SL
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power SurflightVCSEL 850nm 35mW/sr, +/-28deg.
Datasheet: VSMY2853SL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1378 ea
Line Total: USD 1.14 
Availability - 8698
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1358
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7941
10 : USD 0.6604
25 : USD 0.6582
100 : USD 0.5567
250 : USD 0.524
500 : USD 0.5101
1000 : USD 0.4474

49470
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4361
6000 : USD 0.4361

11
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9209
10 : USD 0.7814
30 : USD 0.7036
100 : USD 0.617
500 : USD 0.578
1000 : USD 0.5611

8698
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1378
10 : USD 0.7408
100 : USD 0.5472
500 : USD 0.4855
1000 : USD 0.4419
3000 : USD 0.4012
9000 : USD 0.3998
24000 : USD 0.3943

293
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.134
10 : USD 0.7672
31 : USD 0.574
84 : USD 0.5418
1000 : USD 0.5222

1358
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 21
Multiples : 1
21 : USD 0.4474

32010
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.1968

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Illumination Color
Length
Product
Series
Type
Width
Brand
Lens Shape
Viewing Angle
Cnhts
Fall Time
Hts Code
Lens Dimensions
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Tradename
Vr - Reverse Voltage
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We are delighted to provide the VSMY2853SL from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VSMY2853SL and other electronic components in the Infrared Emitters - High Power category and beyond.

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VSMY2853SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface-mount Package form: side view Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 Peak wavelength: = 850 nm p High reliability High radiant power Very high radiant intensity Angle of half intensity: = 28 DESCRIPTION TM Suitable for high pulse current operation As part of the SurfLight portfolio, the VSMY2853SL is an infrared, 850 nm, side looking emitting diode based on Package matches with detector VEMD2xx3SLX01 and GaAlAs surface emitter chip technology with extreme high VEMT2xx3SLX01 series radiant intensities, high optical power and high speed, Floor life: 4 weeks, MSL 2a, according to J-STD-020 molded in clear, untinted plastic packages (with lens) for Material categorization: for definitions of compliance surface mounting (SMD). please see www.vishay.com/doc 99912 APPLICATIONS Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR touch panels IR illumination PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMY2853SL 50 28 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2853SL Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note MOQ: minimum order quantity Rev. 1.2, 31-Jul-2018 Document Number: 83481 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY2853SL www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature Accordung to Fig. 7, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient EIA / JESD51 R 250 K/W thJA 120 200 180 100 160 140 80 120 60 100 R = 250 K/W thJA 80 R = 250 K/W thJA 40 60 40 20 20 0 0 0 10 203040 50607080 90 100 0 1020 3040506070 8090 100 T - Ambient Temperature (C) 21890 21891 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V -1.6 1.9 V F p F Forward voltage I = 1 A, t = 100 s V -2.8 - V F p F Temperature coefficient of V I = 100 mA TK --1.5 - mV/K F F VF Reverse current I Not designed for reverse operation A R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -50- pF R J I = 100 mA, t = 20 ms I 27 50 75 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I - 350 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -55- mW F p e Temperature coefficient of radiant I = 100 mA TK --0.12 - %/K F e power Angle of half intensity - 28 - deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA -30- nm F Temperature coefficient of I = 30 mA TK -0.25- nm/K p F p Rise time I = 100 mA, 10 % to 90 % t -10- ns F r Fall time I = 100 mA, 10 % to 90 % t -10- ns F f Rev. 1.2, 31-Jul-2018 Document Number: 83481 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Vishay / Thin Film
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