X-On Electronics has gained recognition as a prominent supplier of SFH 4556 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. SFH 4556 Infrared Emitters - High Power are a product manufactured by OSRAM. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

SFH 4556 OSRAM

SFH 4556 electronic component of OSRAM
SFH 4556 OSRAM
SFH 4556 Infrared Emitters - High Power
SFH 4556  Optoelectronics

Images are for reference only
See Product Specifications
Part No. SFH 4556
Manufacturer: OSRAM
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power Infrared 850 nm
Datasheet: SFH 4556 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8763 ea
Line Total: USD 0.88 
Availability - 6480
Ship by Fri. 02 May to Tue. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6480
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.8763
10 : USD 0.5675
100 : USD 0.3498
500 : USD 0.2959
1000 : USD 0.2739
2000 : USD 0.2585
5000 : USD 0.2431
10000 : USD 0.2354
25000 : USD 0.2354

618
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 1.246
10 : USD 0.7574
52 : USD 0.3626
141 : USD 0.343
2000 : USD 0.3402

   
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RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SFH 4556 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFH 4556 and other electronic components in the Infrared Emitters - High Power category and beyond.

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2014-01-16 High Power Infrared Emitter (850 nm) IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 / acc. to OS-PCN-2009-021-A2 SFH 4556 Features: Besondere Merkmale: High Power Infrared LED Infrarot LED mit hoher Ausgangsleistung Short switching time Kurze Schaltzeiten Applications Anwendungen Infrared Illumination for cameras Infrarotbeleuchtung fr Kameras Sensor technology Sensorik Data transmission Datenbertragung Notes Hinweise Depending on the mode of operation, these devices Je nach Betriebsart emittieren diese Bauteile emit highly concentrated non visible infrared light hochkonzentrierte, nicht sichtbare which can be hazardous to the human eye. Products Infrarot-Strahlung, die gefhrlich fr das which incorporate these devices have to follow the menschliche Auge sein kann. Produkte, die diese safety precautions given in IEC 60825-1 and IEC Bauteile enthalten, mssen gem den 62471. Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Ordering Information Bestellinformation Type: Radiant Intensity Ordering Code Typ: Strahlstrke Bestellnummer I = 100 mA, t = 20 ms F p I mW/sr e SFH 4556 145 ( 63) Q65110A6087 Note: Measured at a solid angle of = 0.01 sr Anm.: Gemessen bei einem Raumwinkel = 0.01 sr 2014-01-16 1Version 1.1 / acc. to OS-PCN-2009-021-A2 SFH 4556 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operation and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 5V R Sperrspannung Forward current I 100 mA F Durchlassstrom Surge current I 1A FSM Stostrom (t 100 s, D = 0) p Total power dissipation P 180 mW tot Verlustleistung ESD withstand voltage V 2kV ESD ESD Festigkeit (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 10 Thermal resistance junction - ambient R 450 K / W thJA Wrmewiderstand Sperrschicht - Umgebung 1) Seite 10 Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Emission wavelength (typ) 860 nm peak Zentrale Emissionswellenlnge (I = 100 mA, t = 20 ms) F p Centroid Wavelength (typ) 850 nm centroid Schwerpunktwellenlnge der Strahlung (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max Spektrale Bandbreite bei 50% von I max (I = 100 mA, t = 20 ms) F p Half angle (typ) 20 Halbwinkel 2 Active chip area (typ) A 0.09 mm Aktive Chipflche 2014-01-16 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania
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