X-On Electronics has gained recognition as a prominent supplier of SFH 4250S Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. SFH 4250S Infrared Emitters - High Power are a product manufactured by OSRAM. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

SFH 4250S OSRAM

SFH 4250S electronic component of OSRAM
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Part No.SFH 4250S
Manufacturer: OSRAM
Category: Infrared Emitters - High Power
Description: OSRAM Opto Semiconductors Infrared Emitters - High Power Infrared 850nm
Datasheet: SFH 4250S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1903 ea
Line Total: USD 1.19 
Availability - 8309
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3807
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8062
10 : USD 0.6673
30 : USD 0.5979
100 : USD 0.5285
500 : USD 0.488
1000 : USD 0.4668

10481
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1568
10 : USD 0.7421
100 : USD 0.5717
500 : USD 0.5341
1000 : USD 0.4536
2000 : USD 0.4482
4000 : USD 0.4482
10000 : USD 0.4415
24000 : USD 0.4402

8309
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1903
10 : USD 0.7811
100 : USD 0.5395
500 : USD 0.5126
1000 : USD 0.4455
2000 : USD 0.4161
10000 : USD 0.412
24000 : USD 0.412
50000 : USD 0.3986

104
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.134
10 : USD 0.9842
35 : USD 0.4998
94 : USD 0.4732

   
Manufacturer
Product Category
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Qualification
Hts Code
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We are delighted to provide the SFH 4250S from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFH 4250S and other electronic components in the Infrared Emitters - High Power category and beyond.

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2016-09-23 High Power Infrared Emitter (850 nm) Version 1.7 / acc. to OS-PCN-2015-025-A SFH 4250S Features: High Power Infrared LED Double Stack emitter High Power Infrared LED Short switching times The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras IR data transmission Sensor technology Automotive technology Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I mW/sr e I =100 mA, t =20 ms F p SFH 4250S 30 ( 16) Q65111A0128 SFH 4250S-S 16 ... 32 Q65111A9686 SFH 4250S-ST 16 ... 50 Q65111A1300 Note: Measured at a solid angle of = 0.01 sr 2016-09-23 1Version 1.7 / acc. to OS-PCN-2015-025-A SFH 4250S Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 5 V R Forward current I 100 mA F Surge current I 0.7 A FSM (t 300 s, D = 0) p Power consumption P 245 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 12 Thermal resistance junction - ambient R 300 K / W thJA Thermal resistance junction - soldering point R 140 K / W thJS 2) page 12 Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 100 mA, t = 20 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max (I = 100 mA, t = 20 ms) F p Half angle (typ) 60 Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 15 ns e e max r f (I = 100 mA, R = 50 ) F L Forward voltage (typ (max)) V 3.1 ( 3.6) V F (I = 100 mA, t = 20 ms) F p Forward voltage (typ (max)) V 4 ( 5.2) V F (I = 700 mA, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 100 mW e (I = 100 mA, t =20 ms) F p 2016-09-23 2

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