2016-08-22
OSLON Black Series (850 nm) - 90
Version 1.4
SFH 4715AS
Features:
IR lightsource with high efficiency
Double Stack emitter
Low thermal resistance (Max. 9 K/W)
Centroid wavelength 850 nm
Superior Corrosion Robustness (see chapter package outlines)
The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification
for Automotive Grade Discrete Semiconductors.
Applications
Infrared Illumination for cameras
Surveillance systems
Machine vision systems
Eye tracking systems
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type: Radiant Intensity Ordering Code
I [mW/sr]
e
I = 1 A, t = 10 ms
F p
SFH 4715AS 780 ( 500) Q65111A6857
SFH 4715AS-EA 630 ... 1000 Q65112A0262
Note: measured at a solid angle of = 0.01 sr
2016-08-22 1Version 1.4 SFH 4715AS
Maximum Ratings (T = 25 C)
A
Parameter Symbol Values Unit
Operation and storage temperature range T ; T -40 ... 125 C
op stg
Junction temperature T 145 C
j
Reverse voltage V 1 V
R
Forward current I 1500 mA
F
Surge current I 3 A
FSM
(t = 2 ms, D = 0)
p
Power consumption P 5.8 W
tot
ESD withstand voltage V 2 kV
ESD
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Thermal resistance junction - solder point R 9 K / W
thJS
Note: For the forward current and power consumption please seemaximum permissible forward curren
diagram
Characteristics (T = 25 C)
A
Parameter Symbol Values Unit
Peak wavelength (typ) 860 nm
peak
(I = 1 A, t = 10 ms)
F p
Centroid wavelength (typ) 850 nm
centroid
(I = 1 A, t = 10 ms)
F p
Spectral bandwidth at 50% of I (typ) 30 nm
max
(I = 1 A, t = 10 ms)
F p
Half angle (typ) 45
Dimensions of active chip area (typ) L x W 1 x 1 mm x
mm
Rise and fall times of I ( 10% and 90% of I ) (typ) t / t 11/ 14 ns
e e max r f
(I = 3 A, R = 50 )
F L
Forward voltage (typ (max)) V 3.2 ( 3.6) V
F
(I = 1 A, t = 10 ms)
F p
Forward voltage (typ (max)) V 3.35 ( 3.85) V
F
(I = 1.5 A, t = 100 s)
F p
Forward voltage (typ (max)) V 3.8 ( 4.7) V
F
(I = 3 A, t = 100 s)
F p
Reverse current I not designed for A
R
(V = 5 V) reverse operation
R
Total radiant flux (typ) 2000 mW
e
(I = 1.5 A, t = 100 s)
F p
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