SFH 4715AS-EA OSRAM

2016-08-22 OSLON Black Series (850 nm) - 90 Version 1.4 SFH 4715AS Features: IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm Superior Corrosion Robustness (see chapter package outlines) The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras Surveillance systems Machine vision systems Eye tracking systems Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I [mW/sr] e I = 1 A, t = 10 ms F p SFH 4715AS 780 ( 500) Q65111A6857 SFH 4715AS-EA 630 ... 1000 Q65112A0262 Note: measured at a solid angle of = 0.01 sr 2016-08-22 1Version 1.4 SFH 4715AS Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T ; T -40 ... 125 C op stg Junction temperature T 145 C j Reverse voltage V 1 V R Forward current I 1500 mA F Surge current I 3 A FSM (t = 2 ms, D = 0) p Power consumption P 5.8 W tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Thermal resistance junction - solder point R 9 K / W thJS Note: For the forward current and power consumption please seemaximum permissible forward curren diagram Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 1 A, t = 10 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 1 A, t = 10 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max (I = 1 A, t = 10 ms) F p Half angle (typ) 45 Dimensions of active chip area (typ) L x W 1 x 1 mm x mm Rise and fall times of I ( 10% and 90% of I ) (typ) t / t 11/ 14 ns e e max r f (I = 3 A, R = 50 ) F L Forward voltage (typ (max)) V 3.2 ( 3.6) V F (I = 1 A, t = 10 ms) F p Forward voltage (typ (max)) V 3.35 ( 3.85) V F (I = 1.5 A, t = 100 s) F p Forward voltage (typ (max)) V 3.8 ( 4.7) V F (I = 3 A, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 2000 mW e (I = 1.5 A, t = 100 s) F p 2016-08-22 2