2015-12-23 High Power Infrared Emitter (940 nm) Version 1.4 SFH 4547 Features: High Power Infrared LED Short switching times UL version available ( ordering code & test conditions on request) Applications Infrared Illumination for cameras Sensor technology Data transmission Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I mW/sr e I = 100 mA, t = 20 ms F p SFH 4547 50 ( 25) Q65111A1141 Note: Measured at a solid angle of = 0.01 sr 2015-12-23 1Version 1.4 SFH 4547 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 5 V R Forward current I 100 mA F Surge current I 1 A FSM (t 100 s, D = 0) p Power consumption P 180 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 8 Thermal resistance junction - ambient R 450 K / W thJA Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 950 nm peak (I = 100 mA, t = 20 ms) F p Centroid wavelength (typ) 940 nm centroid (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 42 nm max (I = 100 mA, t = 20 ms) F p Half angle (typ) 30 Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns e e max r f (I = 100 mA, R = 50 ) F L Forward voltage (typ (max)) V 1.5 ( 1.8) V F (I = 100 mA, t = 20 ms) F p Forward voltage (typ (max)) V 2.3 ( 3) V F (I = 1 A, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 55 mW e (I =100 mA, t =20 ms) F p Temperature coefficient of I or (typ) TC -0.5 % / K e e I (I = 100 mA, t = 20 ms) F p Temperature coefficient of V (typ) TC -1.3 mV / K F V (I = 100 mA, t = 20 ms) F p Temperature coefficient of wavelength (typ) TC 0.3 nm / K (I = 100 mA, t = 20 ms) F p 2015-12-23 2
