VSMY9854535 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: high power SMD with lens Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24 Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 45 Low forward voltage Designed for high drive currents: up to 1.0 A (DC) and up to 5 A pulses Low thermal resistance: R = 10 K/W thJP Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION Lead (Pb)-free reflow soldering TM Material categorization: for definitions of compliance As part of the SurfLight portfolio, the VSMY9854535 is an please see www.vishay.com/doc 99912 infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded APPLICATIONS in low thermal resistance SMD package with lens. A 35 mil Infrared illumination for CMOS cameras (CCTV) chip provides outstanding low forward voltage and allows DC operation of the device up to 1.0 A. Illumination for 3D gaming Machine vision Bio identification PRODUCT SUMMARY t (ns) COMPONENT I (mW/sr) (deg) (nm) e p r VSMY9854535 370 45 850 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY9854535 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 1A F Peak forward current t /T = 0.5, t = 100 s I 2A p p FM Surge forward current t = 100 s I 5A p FSM Power dissipation P 2.5 W V Junction temperature T 115 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -55 to +100 C stg Soldering temperature According to Fig. 10, J-STD-20 T 260 C sd Thermal resistance junction / pin JESD 51 R 10 K/W thJP Rev. 1.0, 01-Jul-16 Document Number: 84358 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY9854535 www.vishay.com Vishay Semiconductors 3.0 1.2 R = 10 K/W R = 10 K/W thJA thJA 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 A, t = 20 ms V -1.8 2.5 V F p F Forward voltage I = 5 A, t = 100 s V -2.6 - V F p F Temperature coefficient of V I = 100 mA TK --1.5- mV/K F F VF Reverse current V = 5 V I Not designed for reverse operation A R R I = 1 A, t = 20 ms I 160 370 - mW/sr F p e Radiant intensity I = 5 A, t = 100 s I -1500- mW/sr F p e Radiant power I = 1 A, t = 20 ms -630 - mW F p e Temperature coefficient of I = 100 mA TK - -0.13 - %/K e F e Angle of half intensity - 45 - deg Peak wavelength I = 1 A -850 - nm F p Spectral bandwidth I = 1 A -35- nm F Temperature coefficient of I = 100 mA TK -0.2 - nm/K p F p Rise time I = 1 A t -30- ns F r Fall time I = 1 A t -30- ns F f Rev. 1.0, 01-Jul-16 Document Number: 84358 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (W) V I - Forward Current (A) F