Not for New Designs VSOP584.. www.vishay.com Vishay Semiconductors Preamplifier Circuit for IR Remote Control FEATURES Narrow bandpassfilter for all common carrier frequencies High immunity against DC light Intelligent AGC to suppress disturbance from fluorescent lamps and CRTs Low power consumption Wide supply voltage range High immunity against ripple on the supply voltage Output active low 22906 IC manufactured in CMOS technology click logo to get started DESIGN SUPPORT TOOLS Small QFN package with 2 mm width Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Models Available DESCRIPTION The VSOP584.. is designed for use in an IR receiver application together with a photo pin diode. It is a sophisticated receiver concept that is very sensitive to data signals and compatible with the most common data formats for IR remote control. On the other hand it is immune to DC current caused by DC light sources such as tungsten bulbs. The disturbance signal of fluorescent lamps is suppressed there are no unwanted pulses at the output. PARTS TABLE AGC RECOMMENDED FOR LONG BURST CODES (AGC4) (1)(2)(3) 36 kHz VSOP58436 Carrier frequency (4)(5)(6) 38 kHz VSOP58438 Package VSOP Pinning 1, 4, 5 = N.C., 2 = V , 3 = OUT, 6, 8 = GND, 7 = IN S Dimensions (mm) 2.0 W x 2.0 H x 0.76 D Mounting SMD Application Remote control (1) (2) (3) (4) (5) (6) Best remote control code RC-5 RC-6 Panasonic NEC Sharp r-map BLOCK DIAGRAM (Simplified) APPLICATION CIRCUIT V = 2.7 V S 100 to 5.5 V + V S V 0.22 F S Microcontroller Controlled Automatic 33 k Bias VSOP584.. gain threshold Output, or other logic Inte- amplifier control to C IN OUT grator to decode the Input, from photodiode Band- IR signal GND pass- filter 0 V Automatic GND gain control 21536-2 The RC filter i s optional to improve the EOS robustness and the immunity to supply voltage ripple. We recommend to keep the distance between the photodiode and the input of the VSOP584.. as short as possible. 21537-5 Vishay recommends using a photodiode with at least 2 2.3 mm area. The connection between the photodiode and pin 7 should be kept as short as possible and carefully shielded to prevent noise coupling. Rev. 1.9, 04-Apr-18 Document Number: 82444 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Not for New Designs VSOP584.. www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply voltage Pin 2 V -0.3 to +6 V S Supply current Pin 2 I 5mA S Output voltage Pin 3 V -0.3 to (V + 0.3) V O S Output sink current Pin 3 I 5mA O Power dissipation T 85 C P 10 mW amb tot Operating temperature range T -25 to +85 C amb Storage temperature range T -25 to +85 C stg Pin 2, pin 3, MIL-STD-883C V 2000 V ESD ESD stress, HBM Pin 7, MIL-STD-883C V 500 V ESD Pin 2, pin 3, MIL-STD-883C V 200 V ESD ESD stress, MM Pin 7, MIL-STD-883C V 100 V ESD Note Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. ELECTRICAL CHARACTERISTICS (T = -30 C to +85 C) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Supply voltage V 2.7 - 5.5 V S Supply current (pin 2) I = 0, V = 5 V I 0.65 0.85 1.05 mA IN S S Output voltage low (pin 3) I = 2 mA V - - 100 mV OL OL Output voltage high (pin 3) I = 0 V V - 0.25 - - V OL OH S Internal pull up resistor R -33 - k PU (pin 2, pin 3) Max. input DC current V > 0 I 400 - - A IN IN-DCmax. I = 0, f = f I - 700 1000 pA IN-DC C BPF IN-min. Min. signal detection current I = 100 A, f = f I - 5 10 nA IN-DC C BPF IN-min. I = 0, f = f , IN-DC C BPF Output pulse width I = 0.8 nA to 50 A, t t - 6/f t t + 6/f s IN po pi 0 pi pi 0 testsignal see fig. 1, BER 2% Accuracy of bandpass center T = + 25 C f f - 4 % f f + 4 % kHz amb BPF 0 0 0 frequency Bandwidth of bandpassfilter -3 dB, f = 38 kHz B - 3.8 - kHz 0 I burst length t IN pI V output pulse width t OUT po one carrier cycle 1/f C I IN burst length of input signal t pi output pulse width t po 21538 V OUT Fig. 1 - Testsignal Rev. 1.9, 04-Apr-18 Document Number: 82444 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000