X-On Electronics has gained recognition as a prominent supplier of VBPW34FASR Photodiodes across the USA, India, Europe, Australia, and various other global locations. VBPW34FASR Photodiodes are a product manufactured by Vishay. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

VBPW34FASR Vishay

VBPW34FASR electronic component of Vishay
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See Product Specifications
Part No.VBPW34FASR
Manufacturer: Vishay
Category: Photodiodes
Description: Photodiodes Reverse gullwing 780-1050nm +/-65 deg
Datasheet: VBPW34FASR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7028 ea
Line Total: USD 0.7 
Availability - 2648
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
523
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4724
10 : USD 0.4723
25 : USD 0.4722
100 : USD 0.472
250 : USD 0.4719
500 : USD 0.4718

2648
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7028
10 : USD 0.5842
30 : USD 0.5229
100 : USD 0.4634
500 : USD 0.429
1000 : USD 0.4099

6779
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.874
10 : USD 0.6267
100 : USD 0.5186
500 : USD 0.4911
1000 : USD 0.4451
2000 : USD 0.4267
5000 : USD 0.4209
10000 : USD 0.4163
25000 : USD 0.4105

523
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 17
Multiples : 1
17 : USD 0.4718

164900
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 0.5256

   
Manufacturer
Product Category
Product
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VBPW34FASR from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBPW34FASR and other electronic components in the Photodiodes category and beyond.

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VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: GW, RGW VBPW34FAS Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters Fast response times Angle of half sensitivity: = 65 Floor life: 168 h, MSL 3, acc. J-STD-020 VBPW34FASR Lead (Pb)-free reflow soldering Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21726 Halogen-free according to IEC 61249-2-21 definition DESCRIPTION APPLICATIONS VBPW34FAS and VBPW34FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device High speed detector for infrared radiation 2 (SMD) including the chip with a 7.5 mm sensitive area and Infrared remote control and free air data a daylight blocking filter matched with IR emitters operating transmissionsystems, e.g. in combination with TSFFxxxx at wavelength 870 nm or 950 nm. PRODUCT SUMMARY COMPONENT I (A) (deg) 0.5 (nm) ra VBPW34FAS 55 65 780 to 1050 VBPW34FASR 55 65 780 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VBPW34FAS Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing VBPW34FASR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow sloder profile fig. 8 T 260 C sd Thermal resistance junction/ambient R 350 K/W thJA Rev. 1.2, 24-Aug-11 Document Number: 81127 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBPW34FAS, VBPW34FASR www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 50 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 45 55 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 780 to 1050 nm 0.5 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 20 40 60 80 100 0 20 40 60 80 100 94 8403 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.2, 24-Aug-11 Document Number: 81127 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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