VBT1045BP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.41 V at I = 5 A F F FEATURES TMBS 2 Trench MOS Schottky technology D PAK (TO-263AB) Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum 2 peak of 245 C 1 Material categorization: for definitions of compliance VBT1045BP please see www.vishay.com/doc 99912 PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for click logo to get started DESIGN SUPPORT TOOLS protection, using DC forward current without reverse bias. Models MECHANICAL DATA Available 2 Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grade I 10 A F(AV) Terminals: matte tin plated leads, solderable per V 45 V RRM J-STD-002 and JESD 22-B102 I 100 A FSM E3 suffix meets JESD 201 class 1A whisker test V at I = 10 A 0.52 V F F Polarity: as marked T max. (AC mode) 150 C OP Mounting Torque: 10 in-lbs maximum T max. (DC forward current) 200 C J 2 Package D PAK (TO-263AB) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045BP UNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) Maximum DC forward bypassing current (fig. 1) I 10 A F(DC) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 100 A FSM Operating junction temperature range (AC mode) T -40 to +150 C OP (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.50 - F T = 25 C A I = 10 A 0.57 0.68 F (1) Instantaneous forward voltage V V F I = 5 A 0.41 - F T = 125 C A I = 10 A 0.52 0.64 F T = 25 C - 500 A A (2) Reverse current V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 20-Jun-2018 Document Number: 89452 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT1045BP-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT1045BPUNIT Typical thermal resistance R 3.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT1045BP-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT1045BP-E3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 100 10 T = 150 C 10 A T = 125 C A 8 1 T = 100 C A 6 0.1 4 DC Forward Current at 0.01 2 Thermal Equilibrium T = 25 C A 0.001 0 0 25 50 75 100 125 150 175 200 20 40 60 80 100 Case Temperature (C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Reverse Characteristics 10 000 100 T = 25 C J f = 1.0 MHz T = 150 C V = 50 mV A sig p-p 10 T = 125 C A 1000 T = 100 C A 1 T = 25 C A 100 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Junction Capacitance Revision: 20-Jun-2018 Document Number: 89452 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Instantaneous Forward Current (A) DC Forward Current (A) Junction Capacitance (pF) Instantaneous Reverse Current (mA)