VBT2045CBP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.33 V at I = 5.0 A F F FEATURES TMBS 2 Trench MOS Schottky technology D PAK (TO-263AB) K Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 245 C 1 T 200 C max. in solar bypass mode application J VBT2045CBP Material categorization: for definitions of compliance PIN 1 K please see www.vishay.com/doc 99912 PIN 2 HEATSINK click logo to get started TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Models Available MECHANICAL DATA 2 PRIMARY CHARACTERISTICS Case: D PAK (TO-263AB) I 2 x 10 A Molding compound meets UL 94 V-0 flammability rating F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 45 V RRM Terminals: matte tin plated leads, solderable per I 160 A FSM J-STD-002 and JESD 22-B102 V at I = 10 A 0.41 V F F E3 suffix meets JESD 201 class 1A whisker test T max. (AC mode) 150 C OP Polarity: as marked T max. (DC forward current) 200 C J 2 Package D PAK (TO-263AB) Mounting Torque: 10 in-lbs maximum Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT2045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 20 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave I 160 A FSM superimposed on rated load per diode Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 02-Jul-2018 Document Number: 89372 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT2045CBP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 5 A 0.44 - F T = 25 C A I = 10 A 0.49 0.58 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.33 - F T = 125 C A I = 10 A 0.41 0.52 F T = 25 C - 2000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 10 30 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT2045CBPUNIT per diode 3.0 Typical thermal resistance R C/W JC per device 2.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT2045CBP-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT2045CBP-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 6 24 D = 0.8 D = 0.5 5 2020 D = 0.3 4 16 D = 0.2 D = 1.0 3 12 D = 0.1 T 2 8 DC Forward Current atDC Forward Current at 1 4 D = t /T t p p Thermal EThermal Eqquilibriumuilibrium 0 00 0 2 4 6 8 10 12 100 120 140 160 180 200 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 02-Jul-2018 Document Number: 89372 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Rectified Current (A) Average Power Loss (W)