VBT3045BP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.30 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology 2 D PAK (TO-263AB) Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum 2 peak of 245 C 1 T = 200 C max. in solar bypass application J PIN 1 K Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PIN 2 HEATSINK TYPICAL APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Models Available MECHANICAL DATA 2 Case: D PAK (TO-263AB) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 30 A F(DC) Base P/N-E3 - RoHS-compliant, commercial grade V 45 V RRM Terminals: matte tin plated leads, solderable per I 200 A FSM J-STD-002 and JESD 22-B102 V at I = 40 A 0.51 V F F E3 suffix meets JESD 201 class 1A whisker test T max. (AC mode) 150 C OP Polarity: as marked T max. (DC forward current) 200 C J Mounting Torque: 10 in-lbs maximum 2 Package D PAK (TO-263AB) Circuit configurations Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLVBT3045BPUNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) Maximum DC forward bypassing current (fig. 1) I 30 A F(DC) Peak forward surge current 8.3 ms single half sine-wave superimposed I 200 A FSM on rated load Operating junction temperature range (AC mode) T -40 to +150 C OP (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test Revision: 02-Jul-2018 Document Number: 89449 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBT3045BP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.42 - F I = 15 A T = 25 C 0.49 - F A I = 30 A 0.58 0.70 F (1) Instantaneous forward voltage V V F I = 5 A 0.30 - F I = 15 A T = 125 C 0.40 - F A I = 30 A 0.51 0.60 F T = 25 C - 2000 A A (2) Reverse current V = 45 V I R R T = 125 C 19 60 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT3045BP UNIT Typical thermal resistance R 1.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT3045BP-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT3045BP-E3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 100 30 T = 150 C A 25 10 T = 125 C A T = 100 C A 20 15 1 10 T = 25 C A DC Forward Current at 5 Thermal Equilibrium 0 0.1 0 25 50 75 100 125 150 175 200 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics Revision: 02-Jul-2018 Document Number: 89449 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Current (A) Instantaneous Forward Current (A)