333 3 VBT30L60C www.vishay.com Vishay General Semiconductor Dual TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.32 V at I = 5.0 A F F 2 FEATURES D PAK (TO-263AB) Trench MOS Schottky technology K Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020 , 2 Available LF maximum peak of 245 C 1 Material categorization: for definitions of compliance VBT30L60C please see www.vishay.com/doc 99912 PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency converters, switching power LINKS TO ADDITIONAL RESOURCES supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. 3D Models MECHANICAL DATA 2 Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grade I 2 x 15 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 60 V RRM commercial grade I 200 A FSM Terminals: matte tin plated leads, solderable per V at I = 15 A 0.45 V F F J-STD-002 and JESD 22-B102 T max. 150 C J E3 and M3 suffix meet JESD 201 class 2 whisker test 2 Package D PAK (TO-263AB) Polarity: as marked Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT30L60C UNIT Maximum repetitive peak reverse voltage V 60 V RRM per device 30 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 15 Peak forward surge current 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MIN. UNIT I = 5.0 A 0.43 - F I = 7.5 A T = 25 C 0.46 - F A I = 15 A 0.51 0.60 F (1) Instantaneous forward voltage per diode V V F I = 5.0 A 0.32 - F I = 7.5 A T = 125 C 0.36 - F A I = 15 A 0.45 0.57 F T = 25 C -4.0 A (2) Reverse current per diode V = 60 V I mA R R T = 125 C 27 110 A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 29-Apr-2020 Document Number: 89329 1 For technical questions, contact: DiodesAmericas vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VBT30L60C www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT30L60C UNIT per diode 1.8 Typical thermal resistance R C/W JC per device 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT30L60C-E3/4W 1.39 4W 50/tube Tube TO-263AB VBT30L60C-E3/8W 1.39 8W 800/reel Tape and reel TO-263AB VBT30L60C-M3/I 1.39 I 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 100 30 T = 150 C A 25 10 20 T = 125 C A T = 100 C A 15 1 10 T = 25 C A 5 0 0.1 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 10 1000 D = 0.5 D = 0.8 9 D = 0.3 100 8 T = 150 C A 7 T = 125 C A 10 D = 0.2 6 T = 100 C A D = 1.0 5 1 D = 0.1 4 T 0.1 3 2 T = 25 C A 0.01 1 D = t /T t p p 0 0.001 024618 0 12 14 16 18 20 40 60 80 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Dissipation Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 29-Apr-2020 Document Number: 89329 2 For technical questions, contact: DiodesAmericas vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) Average Forward Rectified Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)