V8PM10 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.50 V at I = 4 A F F FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Trench MOS Schottky technology K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C AEC-Q101 qualified available - Automotive ordering code base P/NHM3 SMPC (TO-277A) Material categorization: for definitions of compliance K Anode 1 please see www.vishay.com/doc 99912 Anode 2 Cathode TYPICAL APPLICATIONS click logo to get started For use in low voltage high frequency inverters, DESIGN SUPPORT TOOLS freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA Case: SMPC (TO-277A) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 8 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 100 V commercial grade RRM Base P/NHM3 - halogen-free, RoHS-compliant and I 140 A FSM AEC-Q101 qualified V at I = 8 A (125 C) 0.60 V F F Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package SMPC (TO-277A) M3 and HM3 suffix meet JESD 201 class 2 whisker test Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V8PM10 UNIT Device marking code 8M10 Maximum repetitive peak reverse voltage V 100 V RRM (1) I 8 F(AV) Maximum DC forward current A (2) I 3.7 F(AV) Peak forward surge current 10 ms single half sine-wave I 140 A FSM superimposed on rated load (3) Operating junction temperature range T -40 to +175 C J Storage temperature range T -55 to +175 C STG Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 29-Jan-2019 Document Number: 87620 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V8PM10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 4 A 0.57 - F T = 25 C A I = 8 A 0.69 0.75 F (1) Instantaneous forward voltage V V F I = 4 A 0.50 - F T = 125 C A I = 8 A 0.60 0.66 F T = 25 C 0.01 - A V = 70 V R T = 125 C 1.5 - A (2) Reverse current I mA R T = 25 C - 0.06 A V = 100 V R T = 125 C 3 8 A Typical junction capacitance 4.0 V, 1 MHz C 800 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL V8PM10 UNIT (1)(2) R 75 JA Typical thermal resistance C/W (3) R 4 JM Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient JA (3) Units mounted on 30 mm x 30 mm aluminum PCB, thermal resistance R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V8PM10-M3/H 0.10 H 1500 7 diameter plastic tape and reel V8PM10-M3/I 0.10 I 6500 13 diameter plastic tape and reel (1) V8PM10HM3/H 0.10 H 1500 7 diameter plastic tape and reel (1) V8PM10HM3/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 29-Jan-2019 Document Number: 87620 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000