VBT6045CBP-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.33 V at I = 10 A F F FEATURES TMBS Trench MOS Schottky technology TO-263AB Low forward voltage drop, low power losses High efficiency operation K Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C T 200 C max. in solar bypass mode application J 2 Material categorization: For definitions of compliance 1 please see www.vishay.com/doc 99912 VBT6045CBP PIN 1 K TYPICAL APPLICATIONS PIN 2 HEATSINK For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS MECHANICAL DATA Package TO-263AB Case: TO-263AB I 2 x 30 A F(AV) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and V 45 V RRM commercial grade I 320 A FSM Terminals: Matte tin plated leads, solderable per V at I = 30 A 0.47 V F F J-STD-002 and JESD 22-B102 T max. (AC mode) 150 C OP M3 suffix meets JESD 201 class 1A whisker test T max. (DC forward current) 200 C J Polarity: As marked Diode variation Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT6045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 60 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 320 A FSM superimposed on rated load per diode Operating junction and storage temperature range (AC mode) T , T - 40 to + 150 C OP STG Junction temperature in DC forward current (2) T 200 C J without reverse bias, t 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 30-Apr-13 Document Number: 87963 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VBT6045CBP-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 10 A 0.44 - F I = 15 A T = 25 C 0.47 - F A I = 30 A 0.54 0.64 F (1) Instantaneous forward voltage per diode V V F I = 10 A 0.33 - F I = 15 A T = 125 C 0.37 - F A I = 30 A 0.47 0.56 F T = 25 C - 3000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 18 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT6045CBPUNIT per diode 1.5 Typical thermal resistance R C/W JC per device 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT6045CBP-M3/4W 1.38 4W 50/tube Tube TO-263AB VBT6045CBP-M3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 65 20 60 D = 0.5 D = 0.8 18 D = 0.3 55 16 50 14 45 D = 0.2 40 12 35 10 D = 1.0 30 D = 0.1 8 25 T 20 6 15 4 10 DC Forward Current at 2 D = t /T t p p 5 Thermal Equilibrium 0 0 100 120 140 160 180 200 0 5 10 15 20 25 30 35 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 30-Apr-13 Document Number: 87963 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Rectified Current (A) Average Power Loss (W)