VFT1045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.34 V at I = 2.5 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 T 200 C max. in solar bypass mode application J Material categorization: for definitions of compliance 3 please see www.vishay.com/doc 99912 2 1 TYPICAL APPLICATIONS PIN 1 PIN 2 For use in solar cell junction box as a bypass diode for PIN 3 protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AB I 2 x 5.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 100 A FSM commercial grade V at I = 5.0 A 0.41 V F F Terminals: matte tin plated leads, solderable per T max. (AC mode) 150 C OP J-STD-002 and JESD 22-B102 T max. (DC forward current) 200 C J M3 suffix meets JESD 201 class 1A whisker test Package ITO-220AB Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT1045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 10 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load per diode Isolation voltage from terminal to heatsink, t = 1 min V 1500 V AC Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 2.5 A 0.44 - F T = 25 C A I = 5.0 A 0.49 0.58 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.34 - F T = 125 C A I = 5.0 A 0.41 0.50 F T = 25 C - 500 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 19-Mar-18 Document Number: 89367 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VFT1045CBP www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT1045CBPUNIT per diode 6.5 Typical thermal resistance R C/W JC per device 5.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VFT1045CBP-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 100 1010 T = 150 C A 8 10 T = 125 C A 6 T = 100 C A 4 1 T = 25 C A 2 DC Forward Current atDC Forward Current at Thermal EThermal Eqquilibriumuilibrium 00 0.1 100 120 140 160 180 200100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 4.0 100 D = 0.5 D = 0.8 3.5 D = 0.3 T = 150 C A 3.0 10 T = 125 C A D = 0.2 2.5 1 T = 100 C A D = 1.0 2.0 D = 0.1 1.5 0.1 T 1.0 0.01 0.5 T = 25 C A D = t /T t p p 0 0.001 0123 4 56 20 40 60 80 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 19-Mar-18 Document Number: 89367 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) DC Forward Rectified Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)