VFT1045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.34 V at I = 2.5 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 T 200 C max. in solar bypass mode application J Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 VFT1045CBP TYPICAL APPLICATIONS PIN 1 PIN 2 For use in solar cell junction box as a bypass diode for PIN 3 protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS I 2 x 5.0 A Case: ITO-220AB F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 100 A FSM commercial grade V at I = 5.0 A 0.41 V F F Terminals: Matte tin plated leads, solderable per T max. (AC mode) 150 C OP J-STD-002 and JESD 22-B102 T max. (DC forward current) 200 C J M3 suffix meets JESD 201 class 1A whisker test Package ITO-220AB Polarity: As marked Diode variation Dual common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT1045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 10 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load per diode Isolation voltage from terminal to heatsink, t = 1 min V 1500 V AC , T -40 to +150 C Operating junction and storage temperature range (AC mode) T OP STG Junction temperature in DC forward current (2) T 200 C J without reverse bias, t 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 17-Aug-15 Document Number: 89367 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VFT1045CBP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 2.5 A 0.44 - F T = 25 C A I = 5.0 A 0.49 0.58 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.34 - F T = 125 C A I = 5.0 A 0.41 0.50 F T = 25 C - 500 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT1045CBPUNIT per diode 6.5 Typical thermal resistance R C/W JC per device 5.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VFT1045CBP-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 4.0 12 D = 0.5 D = 0.8 3.5 D = 0.3 1010 3.0 8 D = 0.2 2.5 D = 1.0 2.0 6 D = 0.1 1.5 4 T 1.0 2 DC Forward Current atDC Forward Current at 0.5 D = t /T Thermal EThermal Eqquilibriumuilibrium t p p 0 00 0123 4 56 100 120 140 160 180 200100 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 17-Aug-15 Document Number: 89367 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Rectified Current (A) Average Power Loss (W)