VFT2045C-M3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.33 V at I = 5.0 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 3 2 1 VFT2045C TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency DC/DC converters, switching PIN 3 power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AB I 2 x 10 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 160 A FSM commercial grade V at I = 10 A 0.41 V F F Terminals: Matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package ITO-220AB M3 suffix meets JESD 201 class 1A whisker test Diode variation Dual common cathode Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT2045C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 20 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 10 Peak forward surge current 8.3 ms single half sine-wave I 160 A FSM superimposed on rated load Isolation voltage from termal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 22-Nov-13 Document Number: 89354 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VFT2045C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.44 - F T = 25 C A I = 10 A 0.49 0.58 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.33 - F T = 125 C A I = 10 A 0.41 0.52 F T = 25 C -2000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 10 30 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT2045CUNIT per diode 6.0 Typical thermal resistance R C/W JC per device 4.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VFT2045C-M3/4W 1.76 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 24 6 D = 0.8 D = 0.5 20 5 D = 0.3 16 4 D = 0.2 D = 1.0 12 3 D = 0.1 T 8 2 4 1 D = t /T t p p 0 0 80 90 100 110 120 130 140 150 0 2 4 6 8 10 12 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 22-Nov-13 Document Number: 89354 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)