VF30100C-E3/4W Vishay

333 3 V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.455 V at I = 5 A F F FEATURES TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB 3 3 2 2 package) 1 1 V30100C VF30100C Low thermal resistance PIN 1 PIN 2 PIN 1 PIN 2 Solder bath temperature 275 C maximum, 10 s, per PIN 3 CASE PIN 3 JESD 22-B106 (for TO-220AB, ITO-220AB, and 2 TO-262AA package) D PAK (TO-263AB) TO-262AA K Material categorization: for definitions of compliance K please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS 2 For use in high frequency converters, switching power 1 3 2 supplies, freewheeling diodes, OR-ing diode, DC/DC 1 VB30100C VI30100C converters, and reverse battery protection. PIN 1 K PIN 1 PIN 2 PIN 2 HEATSINK MECHANICAL DATA PIN 3 K 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and ADDITIONAL RESOURCES TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 3D Models Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 PRIMARY CHARACTERISTICS E3 suffix meets JESD 201 class 1A whisker test I 2 x 15 A F(AV) Polarity: as marked V 100 V RRM Mounting Torque: 10 in-lbs maximum I 160 A FSM V at I = 15 A 0.63 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30100C VF30100C VB30100C VI30100C UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 30 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave 160 A I FSM superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 210 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, p I 1.0 A RRM T = 38 C 2 C per diode J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 15-Oct-2019 Document Number: 89010 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 10 mA T = 25 C V 100 (minimum) - V R A BR I = 5 A 0.516 - F I = 7.5 A T = 25 C 0.576 - F A I = 15 A 0.734 0.80 F Instantaneous forward voltage (1) V V F per diode I = 5 A 0.455 - F I = 7.5 A T = 125 C 0.522 - F A I = 15 A 0.627 0.68 F T = 25 C 7.2 - A A V = 70 V R T = 125 C 8.0 - mA A (2) Reverse current per diode I R T = 25 C 65 500 A A V = 100 V R T = 125 C 20 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30100CVF30100CVB30100CVI30100CUNIT Typical thermal resistance per diode R 2.5 5.5 2.5 2.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30100C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF30100C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB30100C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB30100C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI30100C-E3/4W 1.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 14 D = 0.8 D = 0.5 Resistive or Inductive Load D = 0.3 30 12 D = 0.2 VF30100C D = 0.1 25 V30100C 10 VI(B)30100C D = 1.0 20 8 15 6 T 10 4 5 2 D = t /T t p p 0 0 0 25 50 75 100 125 150 0246 8 10 12 14 16 18 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 15-Oct-2019 Document Number: 89010 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)