VF30100S-E3/4W Vishay

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.39 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum 3 3 2 peak of 245 C (for TO-263AB package) 2 1 1 V30100S VF30100S Solder bath temperature 275 C maximum, 10 s, per PIN 1 PIN 1 PIN 2 PIN 2 JESD 22-B106 (for TO-220AB, ITO-220AB, and CASE PIN 3 PIN 3 TO-262AA package) 2 D PAK (TO-263AB) TO-262AA Material categorization: for definitions of compliance K please see www.vishay.com/doc 99912 K TYPICAL APPLICATIONS For use in high frequency converters, switching power A supplies, freewheeling diodes, OR-ing diode, DC/DC NC 3 2 converters and reverse battery protection. VB30100S VI30100S 1 PIN 1 NC K PIN 2 MECHANICAL DATA A HEATSINK K PIN 3 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and click logo to get started TO-262AA DESIGN SUPPORT TOOLS Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Models Available Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 30 A F(AV) Mounting Torque: 10 in-lbs maximum V 100 V RRM I 250 A FSM V at I = 30 A 0.69 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB),TO-262AA Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30100S VF30100S VB30100S VI30100S UNIT Maximum repetitive peak reverse voltage V 100 V RRM Maximum average forward rectified current (fig. 1) I 30 A F(AV) Peak forward surge current 8.3 ms single half I 250 A FSM sine-wave superimposed on rated load Non-repetitive avalanche energy at T = 25 C, L = 90 mH E 230 mJ J AS Peak repetitive reverse current I 1.0 A RRM at t = 2 s, 1 kHz, T = 38 C 2 C p J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink V 1500 V AC t = 1 min Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 88941 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 10 mA T = 25 C V 105 (minimum) - V R A BR I = 5 A 0.47 - F I = 10 A T = 25 C 0.55 - F A I = 30 A 0.80 0.91 F (1) Instantaneous forward voltage V V F I = 5 A 0.39 - F I = 10 A T = 125 C 0.49 - F A I = 30 A 0.69 0.78 F T = 25 C 27 - A A V = 70 V R T = 125 C 11 - mA A (2) Reverse current I R T = 25 C 70 1000 A A V = 100 V R T = 125 C 23 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30100SVF30100SVB30100SVI30100SUNIT Typical thermal resistance R 2.0 4.0 2.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30100S-E3/4W 1.875 4W 50/tube Tube ITO-220AB VF30100S-E3/4W 1.805 4W 50/tube Tube TO-263AB VB30100S-E3/4W 1.380 4W 50/tube Tube TO-263AB VB30100S-E3/8W 1.380 8W 800/reel Tape and reel TO-262AA VI30100S-E3/4W 1.455 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 32 D = 0.5 D = 0.8 Resistive or Inductive Load 28 D = 0.3 30 V(B,I)30100S D = 0.2 24 25 D = 1.0 D = 0.1 VF30100S 20 20 16 15 12 T 10 8 5 Mounted on Specific Heat sink 4 D = t /T t p p 0 0 0 4 8 12162024283236 0 25 50 75 100 125 150 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 18-Jun-2018 Document Number: 88941 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)