V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.60 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 2 2 1 Solder bath temperature 275 C maximum, 10 s, V20200C 1 VF20200C per JESD 22-B106 (for TO-220AB, ITO-220AB and PIN 1 PIN 1 PIN 2 PIN 2 TO-262AA package) CASE PIN 3 PIN 3 Material categorization: for definitions of compliance 2 please see www.vishay.com/doc 99912 D PAK (TO-263AB) TO-262AA K K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC 2 converters and reverse battery protection. 1 3 2 VB20200C VI20200C MECHANICAL DATA 1 PIN 1 PIN 1 K PIN 2 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and K PIN 2 HEATSINK PIN 3 TO-262AA Molding compound meets UL 94 V-0 flammability rating click logo to get started DESIGN SUPPORT TOOLS Base P/N-E3 - RoHS compliant, commercial grade Terminals: matte tin plated leads, solderable per Models J-STD-002 and JESD 22-B102 Available E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked PRIMARY CHARACTERISTICS I 2 x 10 A Mounting Torque: 10 in-lbs max. F(AV) V 200 V RRM I 120 A FSM V at I = 10 A 0.68 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20200C VF20200C VB20200C VI20200C UNIT Max. repetitive peak reverse voltage V 200 V RRM per device 20 Max. average forward rectified current (fig. 1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed I 120 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 100 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C per p J I 0.5 A RRM diode Voltage rate of change (rated V) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 89072 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA TA = 25 C V 200 (min.) - V R BR I = 5 A 0.85 - F T = 25 C A I = 10 A 1.21 1.60 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.60 - F T = 125 C A I = 10 A 0.68 0.76 F T = 25 C 6- A A V = 180 V R T = 125 C 3.6 - mA A (2) Reverse current per diode I R T = 25 C - 150 A A V = 200 V R T = 125 C 5.6 18 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20200C VF20200C VB20200C VI20200C UNIT Typical thermal resistance per diode R 2.8 5.0 2.8 2.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20200C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20200C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20200C-E3/4W 1.37 4W 50/tube Tube TO-263AB VB20200C-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VI20200C-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 25 9 D = 0.8 Resistive or Inductive Load D = 0.5 8 V20200C D = 0.3 20 7 D = 0.2 D = 1.0 6 D = 0.1 15 5 VF20200C 4 10 T 3 2 5 D = t /T t 1 p p 0 0 25 50 75 100 125 150 175 0 024 6 810 12 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 89072 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)