X-On Electronics has gained recognition as a prominent supplier of SB1100E-G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SB1100E-G Schottky Diodes & Rectifiers are a product manufactured by Comchip. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SB1100E-G Comchip

SB1100E-G electronic component of Comchip
SB1100E-G Comchip
SB1100E-G Schottky Diodes & Rectifiers
SB1100E-G  Semiconductors

Images are for reference only
See Product Specifications
Part No. SB1100E-G
Manufacturer: Comchip
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Low VF ESD 1A 100V Schottky Rectifier
Datasheet: SB1100E-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3676 ea
Line Total: USD 0.37 
Availability - 5588
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5588
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3676
10 : USD 0.2479
100 : USD 0.1799
500 : USD 0.1266
1000 : USD 0.0979
2500 : USD 0.0968
5000 : USD 0.0968
10000 : USD 0.083
25000 : USD 0.082

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Termination Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif
 
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We are delighted to provide the SB1100E-G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SB1100E-G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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ESD Leaded Schottky Barrier Rectifiers SB120E-G Thru. SB1100E-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device DO-41 Features -Low drop down voltage. -1.0A operation at TA=75C with no thermal runaway. 1.0(25.4) Min. -For use in low voltage, high frequency invertors free 0.106(2.7) wheeling and polarity protection. 0.079(2.0) -Silicon epitaxial planar chips. -ESD test under IEC6100-4-2 : 0.205(5.2) Standard: >15KV(Air) & 8KV(Contact) 0.160(4.1) -Lead-free part, meet RoHS requirements. Mechanical data 1.0(25.4) Min. -Epoxy: UL94-V0 rated flame retardant 0.034(0.86) 0.001(0.70) -Case: Molded plastic body DO-41 -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end Dimensions in inches and (millimeter) -Mounting Position: Any -Weight: 0.34 grams Maximum Rating and Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. SB SB SB SB SB SB SB Symbol Parameter Unit 140E-G 120E-G 145E-G 150E-G 160E-G 180E-G 1100E-G Maximum recurrent peak reverse voltage VRRM 20 40 45 50 60 80 100 V Maximum RMS voltage VRMS 14 28 30 35 42 56 70 V Maximum DC blocking voltage VDC 20 40 45 50 60 80 100 V Maximum average forward rectified current I(AV) A 1.0 0.375 (9.5mm) lead length at TA=75C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM 30 A (JEDEC method) TL=110C Maximum forward voltage at 1.0A (Note 1) VF V 0.50 0.70 0.85 0.5 Maximum DC reverse current TA=25C IR mA At rated DC blocking voltage TA=100C 10 5 Typical junction capacitance (Note 2) pF CJ 110 R JA 80.0 Typical thermal resistance (Note 3) C/W R JL 30.0 Operating junction temperature range TJ -65 to +125 -65 to +150 C Storage temperature range TSTG -65 to +150 C NOTES: 1. Pulse test : 300S pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.375 (9.5mm) lead length Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BB059 Page 1 Comchip Technology CO., LTD.ESD Leaded Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (SB120E-G Thru. SB1100E-G) Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-repetitive Peak Forward Surge Current 1.2 100 1.0 0.8 0.6 SB120E-G ~ SB145E-G 10 0.4 SB150E-G ~ SB1100E-G TL=110C 0.2 single phase half wave 60Hz 8.3mS single half sine-wave resistive or inductive load (JEDEC Method) 3.75(9.5mm) lead length 0 1 1 10 100 0 25 50 75 100 175 125 150 Lead Temperature, (C) Number of Cycles at 60Hz Fig.3 Typical Instantaneous Forward Fig.4A Typical Reverse Characteristics Characteristics 10 100 SB120E-G ~ SB145E-G pulse width =300S 1% duty cycle, Tj=25C 10 SB120E-G ~ SB145E-G TJ=125C 1.0 1.0 TJ=75C 0.1 SB150E-G ~ SB160E-G 0.1 0.01 TJ=25C SB180E-G ~ SB1100E-G 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage, (V) Percent of Rated Peak Reverse Voltage, (%) Fig.5 Typical Junction Capacitance Fig. 4B Typeical Reverse Characteristic 1000 1000 SB150E-G ~ SB1100E-G 100 TJ=150C TJ=125C 10 100 TJ=100C 1.0 0.1 TJ=25C f=1.0MHz TJ=25C 10 0.01 0.1 1.0 10 100 0 20 40 60 80 100 Reverse Voltage, (V) Percent of Rated Peak Reverse Voltage, ( %) Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BB059 Page 2 Comchip Technology CO., LTD. Junction Capacitacne, (pF) Instantaneous Forward Current, (A) Average Forward Current, (A) Instantaneous Reverse Current, (A) Instantaneous Reverse Current, (mA) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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