V40120C, VF40120C, VB40120C, VI40120C
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Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.43 V at I = 5 A
F F
FEATURES
TMBS
Trench MOS Schottky technology
TO-220AB ITO-220AB
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 C (for TO-263AB package)
Solder bath temperature 275 C maximum, 10 s,
3 3
2
2 per JESD 22-B106 (for TO-220AB, ITO-220AB and
1
V40120C VF40120C
1
TO-262AA package)
PIN 1 PIN 1
PIN 2 PIN 2
Material categorization: for definitions of compliance
CASE
PIN 3 PIN 3
please see www.vishay.com/doc?99912
2
D PAK (TO-263AB) TO-262AA
TYPICAL APPLICATIONS
K
K For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
MECHANICAL DATA
1 3
2
2
Case: TO-220AB, ITO-220AB, DPAK (TO-263AB),
VB40120C VI40120C
1
and TO-262AA
PIN 1 K
PIN 1 PIN 2
Molding compound meets UL 94 V-0 flammability rating
PIN 2 HEATSINK K
PIN 3
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
click logo to get started
DESIGN SUPPORT TOOLS
commercial grade
Terminals: matte tin plated leads, solderable per
Models
Available
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
I 2 x 20 A Mounting Torque: 10 in-lbs maximum
F(AV)
V 120 V
RRM
I 250 A
FSM
V at I = 20 A 0.63 V
F F
T max. 150 C
J
TO-220AB, ITO-220AB,
Package
2
D PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V40120CVF40120CVB40120CVI40120CUNIT
Maximum repetitive peak reverse voltage V 120 V
RRM
per device 40
Maximum average forward rectified current (fig. 1) I A
F(AV)
per diode 20
Peak forward surge current 8.3 ms single half sine-wave superimposed
I 250 A
FSM
on rated load per diode
Non-repetitive avalanche energy at T = 25 C, L = 100 mH per diode E 180 mJ
J AS
Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C
p J
I 0.5 A
RRM
per diode
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Operating junction and storage temperature range T , T -40 to +150 C
J STG
Revision: 18-Jun-2018 Document Number: 88937
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40120C, VF40120C, VB40120C, VI40120C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
120
Breakdown voltage I = 1.0 mA T = 25 C V -V
R A BR
(minimum)
I = 5 A 0.50 -
F
I = 10 A T = 25 C 0.60 -
F A
I = 20 A 0.78 0.88
F
(1)
Instantaneous forward voltage per diode V V
F
I = 5 A 0.43 -
F
I = 10 A T = 125 C 0.53 -
F A
I = 20 A 0.63 0.71
F
T = 25 C 19 - A
A
V = 90 V
R
T = 125 C 10 - mA
A
(2)
Reverse current per diode I
R
T = 25 C - 500 A
A
V = 120 V
R
T = 125 C 22 45 mA
A
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V40120CVF40120CVB40120CVI40120CUNIT
Typical thermal resistance per diode R 1.8 4.0 1.8 1.8 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V40120C-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VF40120C-E3/4W 1.76 4W 50/tube Tube
TO-263AB VB40120C-E3/4W 1.39 4W 50/tube Tube
TO-263AB VB40120C-E3/8W 1.39 8W 800/reel Tape and reel
TO-262AA VI40120C-E3/4W 1.46 4W 50/tube Tube
TO-220AB V40120C-M3/4W 1.88 4W 50/tube Tube
ITO-220AB VF40120C-M3/4W 1.76 4W 50/tube Tube
TO-263AB VB40120C-M3/4W 1.39 4W 50/tube Tube
TO-263AB VB40120C-M3/8W 1.39 8W 800/reel Tape and reel
TO-262AA VI40120C-M3/4W 1.46 4W 50/tube Tube
Revision: 18-Jun-2018 Document Number: 88937
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000