X-On Electronics has gained recognition as a prominent supplier of VFT1045BP-M3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VFT1045BP-M3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VFT1045BP-M3/4W Vishay

VFT1045BP-M3/4W electronic component of Vishay
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Part No.VFT1045BP-M3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10A 45V TrenchMOS
Datasheet: VFT1045BP-M3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.265 ea
Line Total: USD 1.26 
Availability - 7682
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7682
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.265
10 : USD 0.6941
100 : USD 0.6259
500 : USD 0.5038
1000 : USD 0.4631
10000 : USD 0.4565

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VFT1045BP-M3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VFT1045BP-M3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VFT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.41 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AC Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance 2 please see www.vishay.com/doc 99912 1 TYPICAL APPLICATIONS VFT1045BP PIN 1 For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN 2 MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AC I 10 A F(DC) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 100 A FSM commercial grade V at I = 10 A 0.52 V F F Terminals: matte tin plated leads, solderable per T max. (AC mode) 150 C OP J-STD-002 and JESD 22-B102 T max. (DC forward current) 200 C M3 suffix meets JESD 201 class 1A whisker test J Package ITO-220AC Polarity: as marked Circuit configuration Single Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT1045BPUNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) Maximum DC forward bypassing current (fig. 1) I 10 A F(DC) Peak forward surge current 8.3 ms single half sine-wave superimposed on I 100 A FSM rated load Operating junction temperature range (AC mode) T -40 to +150 C OP Isolation voltage from termal to heatsink t = 1 min V 1500 V AC (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.50 - F T = 25 C A I = 10 A 0.57 0.68 F (1) Instantaneous forward voltage V V F I = 5 A 0.41 - F T = 125 C A I = 10 A 0.52 0.64 F T = 25 C - 500 A A (2) Reverse current V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 19-Mar-18 Document Number: 89453 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VFT1045BP www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT1045BPUNIT Typical thermal resistance R 5.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AC VFT1045BP-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 100 10 T = 150 C 10 A T = 125 C A 8 1 T = 100 C A 6 0.1 4 DC Forward Current at 0.01 2 Thermal Equilibrium T = 25 C A 0 0.001 0 25 50 75 100 125 150 175 200 20 40 60 80 100 Case Temperature (C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Reverse Characteristics 100 10 000 T = 25 C J T = 150 C A f = 1.0 MHz V = 50 mV sig p-p 10 T = 125 C A T = 100 C A 1000 1 T = 25 C A 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Junction Capacitance Revision: 19-Mar-18 Document Number: 89453 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Instantaneous Forward Current (A) DC Forward Current (A) Junction Capacitance (pF) Instantaneous Reverse Current (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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