VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.40 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB ITO-220AB Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 Solder bath temperature 275 C maximum, 10 s, per 2 2 1 JESD 22-B106 (for TO-220AB, ITO-220AB, and 1 VT2060C VFT2060C TO-262AA package) PIN 1 PIN 2 PIN 1 PIN 2 Material categorization: for definitions of compliance PIN 3 CASE PIN 3 please see www.vishay.com/doc 99912 TO-263AB TO-262AA TYPICAL APPLICATIONS For use in high frequency converters, switching power K K supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA 2 Case: TO-220AB, ITO-220AB, TO-263AB, and 1 3 2 TO-262AA 1 VBT2060C VIT2060C Molding compound meets UL 94 V-0 flammability rating PIN 1 K PIN 1 PIN 2 Base P/N-E3 - RoHS-compliant, commercial grade PIN 2 HEATSINK PIN 3 K Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 2 x 10 A F(AV) Mounting Torque: 10 in-lbs maximum V 60 V RRM I 150 A FSM V at I = 10 A 0.52 V F F T max. 150 C J TO-220AB, ITO-220AB, Package TO-263AB, TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLVT2060CVFT2060CVBT2060CVIT2060CUNIT Maximum repetitive peak reverse voltage V 60 V RRM per device 20 Maximum average forward rectified current (fig. 1) I F(AV) per diode 10 A Peak forward surge current 8.3 ms single half I 150 FSM sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 120 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 1.0 A p J RRM Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 16-Mar-18 Document Number: 89132 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT Breakdown voltage I = 1.0 mA T = 25 C V 60 (minimum) - V R A BR I = 5 A 0.49 - F T = 25 C A I = 10 A 0.57 0.65 F V F (1) Instantaneous forward voltage per diode V I = 5 A 0.40 - F T = 125 C A I = 10 A 0.52 0.59 F T = 25 C - 850 A A (2) Reverse current per diode V = 60 V I R R T = 125 C 14 40 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLVT2060CVFT2060CVBT2060CVIT2060CUNIT per diode 3.0 6.0 3.2 3.0 Typical thermal resistance R C/W JC per device 1.8 4.8 1.9 1.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT2060C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT2060C-E3/4W 1.76 4W 50/tube Tube TO-263AB VBT2060C-E3/4W 1.39 4W 50/tube Tube TO-263AB VBT2060CE3/8W 1.39 8W 800/reel Tape and reel TO-262AA VIT2060C-E3/4W 1.45 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89132 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000