VFT3045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.30 V at I = 5.0 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 T 200 C max. in solar bypass mode application J Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 TYPICAL APPLICATIONS PIN 1 PIN 2 For use in solar cell junction box as a bypass diode for PIN 3 protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS I 2 x 15 A Case: ITO-220AB F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 200 A FSM commercial grade V at I = 15 A 0.39 V F F Terminals: matte tin plated leads, solderable per T max. (AC mode) 150 C OP J-STD-002 and JESD 22-B102 T max. (DC forward current) 200 C J M3 suffix meets JESD 201 class 1A whisker test Package ITO-220AB Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT3045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 30 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 200 A FSM per diode Isolation voltage from terminal to heatsink, t = 1 min V 1500 V AC Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 5 A 0.42 - F I = 7.5 A T = 25 C 0.44 - F A I = 15 A 0.49 0.57 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.30 - F I = 7.5 A T = 125 C 0.33 - F A I = 15 A 0.39 0.48 F T = 25 C - 2000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 17 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 19-Mar-18 Document Number: 89369 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VFT3045CBP www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT3045CBPUNIT per diode 6.0 Typical thermal resistance R C/W JC per device 4.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VFT3045CBP-M3/4W 1.76 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 100 30 T = 150 C A 25 10 T = 100 C A 20 T = 125 C A 1515 1 10 T = 25 C A 5 DC Forward Current at Thermal Equilibrium 0 0.1 100 120 140 160 180 200 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 9 T = 150 C A D = 0.5 D = 0.8 8 T = 125 C A 10 D = 0.3 7 T = 100 C A 6 D = 0.2 1 5 D = 1.0 D = 0.1 4 0.1 T 3 T = 25 C A 0.01 2 1 D = t /T t p p 0.001 0 20 40 60 80 100 02486 10 12 14 16 18 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 19-Mar-18 Document Number: 89369 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) DC Forward Rectified Current (A) Instantaneous Forward Current (A) Instantaneous Reverse Current (mA)