VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder dip 275 C max. 10 s, per JESD 22-B106 3 3 2 (for TO-220AB, ITO-220AB and TO-262AA package) 2 1 1 Material categorization: for definitions of compliance VT10200C VFT10200C please see www.vishay.com/doc 99912 PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 TYPICAL APPLICATIONS TO-263AB TO-262AA For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC K K converters and reverse battery protection. MECHANICAL DATA 2 Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA 3 1 Molding compound meets UL 94 V-0 flammability rating 2 1 Base P/N-E3 - RoHS-compliant, commercial grade VBT10200C VIT10200C Terminals: matte tin plated leads, solderable per PIN 1 K PIN 1 PIN 2 J-STD-002 and JESD 22-B102 PIN 2 HEATSINK PIN 3 K E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum I 2 x 5.0 A F(AV) V 200 V RRM I 80 A FSM V at I = 5.0 A 0.65 V F F T max. 150 C J TO-220AB, ITO-220AB, Package TO-263AB, TO-262AA Diode variations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT10200C VFT10200C VBT10200C VIT10200C UNIT Maximum repetitive peak reverse voltage V 200 V RRM per device 10.0 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load per diode Non-repetitive avalanche energy E 30 mJ AS at T = 25 C, L = 60 mH per diode J Peak repetitive reverse current I 0.5 A RRM at t = 2 s, 1 kHz, T = 38 C 2 C per diode p J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) V 1500 V AC from terminal to heatsink t = 1 min Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 23-Feb-18 Document Number: 89177 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOL TYP.MAX.UNIT Breakdown voltage I = 1.0 mA T = 25 C V 200 (minimum) - V R A BR I = 2.5 A 0.81 - F T = 25 C A I = 5.0 A 1.10 1.60 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.58 - F T = 125 C A I = 5.0 A 0.65 0.73 F T = 25 C 1.7 - A A V = 180 V R T = 125 C 1.8 - mA A (2) Reverse current per diode I R T = 25 C - 150 A A V = 200 V R T = 125 C 2.5 10 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT10200C VFT10200C VBT10200C VIT10200C UNIT per diode 3.5 7.0 3.5 3.5 Typical thermal resistance R C/W JC per device 2.5 5.5 2.5 2.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT10200C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT10200C-E3/4W 1.72 4W 50/tube Tube TO-263AB VBT10200C-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT10200C-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VIT10200C-E3/4W 1.44 4W 50/tube Tube Revision: 23-Feb-18 Document Number: 89177 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000