VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.46 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB ITO-220AB Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and 3 3 2 2 1 TO-262AA package) 1 VT3080C VFT3080C Material categorization: for definitions of compliance PIN 1 PIN 1 PIN 2 PIN 2 please see www.vishay.com/doc 99912 PIN 3 CASE PIN 3 TYPICAL APPLICATIONS TO-263AB TO-262AA For use in high frequency converters, switching power K supplies, freewheeling diodes, OR-ing diode, DC/DC K converters and reverse battery protection. MECHANICAL DATA 2 Case: TO-220AB, ITO-220AB, TO-263AB and 1 3 2 TO-262AA 1 Molding compound meets UL 94 V-0 flammability rating VBT3080C VIT3080C Base P/N-E3 - RoHS-compliant, commercial grade PIN 1 K PIN 1 PIN 2 Terminals: matte tin plated leads, solderable per PIN 2 HEATSINK K PIN 3 J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 2 x 15 A F(AV) Mounting Torque: 10 in-lbs maximum V 80 V RRM I 150 A FSM V at I = 15 A 0.65 V F F T max. 150 C J TO-220AB, ITO-220AB, Package TO-263AB, TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT3080C VFT3080C VBT3080C VIT3080C UNIT Maximum repetitive peak reverse voltage V 80 V RRM per device 30 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half 150 A I FSM sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 160 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, p I 1.0 A RRM T = 38 C 2 C per diode J Isolation voltage (ITO-220AB only) V 1500 V AC from terminal to heatsink t = 1 min Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 16-Mar-18 Document Number: 89168 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.52 - F I = 7.5 A T = 25 C 0.58 - F A I = 15 A 0.75 0.82 Instantaneous forward voltage F (1) V V F per diode I = 5 A 0.46 - F I = 7.5 A T = 125 C 0.52 - F A I = 15 A 0.65 0.70 F T = 25 C 30 700 A A (2) Reverse current per diode V = 80 V I R R T = 125 C 20 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT3080CVFT3080CVBT3080CVIT3080CUNIT per diode 2.5 6.0 2.5 2.5 Typical thermal resistance R C/W JC per device 2.0 5.0 2.0 2.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT3080C-E3/4W 1.89 4W 50/tube Tube ITO-220AB VFT3080C-E3/4W 1.76 4W 50/tube Tube TO-263AB VBT3080C-E3/4W 1.39 4W 50/tube Tube TO-263AB VBT3080C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VIT3080C-E3/4W 1.46 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89168 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000