VBT3045CBP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.30 V at I = 5.0 A F F FEATURES TMBS Trench MOS Schottky technology TO-263AB Low forward voltage drop, low power losses High efficiency operation K Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C T 200 C max. in solar bypass mode application J 2 Material categorization: For definitions of compliance 1 please see www.vishay.com/doc 99912 VBT3045CBP PIN 1 K TYPICAL APPLICATIONS PIN 2 HEATSINK For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-263AB Package TO-263AB Molding compound meets UL 94 V-0 flammability rating I 2 x 15 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 45 V RRM Terminals: Matte tin plated leads, solderable per I 200 A FSM J-STD-002 and JESD 22-B102 V at I = 15 A 0.39 V F F E3 suffix meets JESD 201 class 1A whisker test T max. (AC mode) 150 C OP Polarity: As marked T max. (DC forward current) 200 C J Mounting Torque: 10 in-lbs maximum Package TO-263AB Diode variation Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT3045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 30 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load per diode Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG Junction temperature in DC forward current (2) T 200 C J without reverse bias, t 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 09-Sep-13 Document Number: 89373 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VBT3045CBP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 5 A 0.42 - F I = 7.5 A T = 25 C 0.44 - F A I = 15 A 0.49 0.57 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.30 - F I = 7.5 A T = 125 C 0.33 - F A I = 15 A 0.39 0.48 F T = 25 C - 2000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 17 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT3045CBPUNIT per diode 1.6 Typical thermal resistance R C/W JC per device 0.85 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT3045CBP-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT3045CBP-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 9 D = 0.5 D = 0.8 8 30 D = 0.3 7 25 6 D = 0.2 20 5 D = 1.0 D = 0.1 4 1515 T 3 10 2 5 DC Forward Current at 1 D = t /T t p p Thermal Equilibrium 0 0 100 120 140 160 180 200 02486 10 12 14 16 18 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 09-Sep-13 Document Number: 89373 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Rectified Current (A) Average Power Loss (W)