V40120C, VF40120C, VB40120C, VI40120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.43 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB ITO-220AB Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, 3 3 2 2 per JESD 22-B106 (for TO-220AB, ITO-220AB and 1 V40120C VF40120C 1 TO-262AA package) PIN 1 PIN 1 PIN 2 PIN 2 Material categorization: for definitions of compliance CASE PIN 3 PIN 3 please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 MECHANICAL DATA 1 3 2 2 Case: TO-220AB, ITO-220AB, DPAK (TO-263AB), VB40120C VI40120C 1 and TO-262AA PIN 1 K PIN 1 PIN 2 Molding compound meets UL 94 V-0 flammability rating PIN 2 HEATSINK K PIN 3 Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and click logo to get started DESIGN SUPPORT TOOLS commercial grade Terminals: matte tin plated leads, solderable per Models Available J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 1A whisker test Polarity: as marked PRIMARY CHARACTERISTICS I 2 x 20 A Mounting Torque: 10 in-lbs maximum F(AV) V 120 V RRM I 250 A FSM V at I = 20 A 0.63 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40120CVF40120CVB40120CVI40120CUNIT Maximum repetitive peak reverse voltage V 120 V RRM per device 40 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed I 250 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 100 mH per diode E 180 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C p J I 0.5 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 88937 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V40120C, VF40120C, VB40120C, VI40120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT 120 Breakdown voltage I = 1.0 mA T = 25 C V -V R A BR (minimum) I = 5 A 0.50 - F I = 10 A T = 25 C 0.60 - F A I = 20 A 0.78 0.88 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.43 - F I = 10 A T = 125 C 0.53 - F A I = 20 A 0.63 0.71 F T = 25 C 19 - A A V = 90 V R T = 125 C 10 - mA A (2) Reverse current per diode I R T = 25 C - 500 A A V = 120 V R T = 125 C 22 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40120CVF40120CVB40120CVI40120CUNIT Typical thermal resistance per diode R 1.8 4.0 1.8 1.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40120C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF40120C-E3/4W 1.76 4W 50/tube Tube TO-263AB VB40120C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB40120C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI40120C-E3/4W 1.46 4W 50/tube Tube TO-220AB V40120C-M3/4W 1.88 4W 50/tube Tube ITO-220AB VF40120C-M3/4W 1.76 4W 50/tube Tube TO-263AB VB40120C-M3/4W 1.39 4W 50/tube Tube TO-263AB VB40120C-M3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI40120C-M3/4W 1.46 4W 50/tube Tube Revision: 18-Jun-2018 Document Number: 88937 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000