VB30120SG-E38W Vishay

V30120SG-E3, VF30120SG-E3, VB30120SG-E3, VI30120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.47 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, 3 3 2 2 per JESD 22-B106 (for TO-220AB, ITO-220AB, 1 V30120SG VF30120SG 1 and TO-262AA package) PIN 1 PIN 1 PIN 2 PIN 2 Material categorization: for definitions of compliance CASE PIN 3 PIN 3 please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A MECHANICAL DATA 3 NC 2 2 VB30120SG VI30120SG Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and 1 PIN 1 NC K PIN 2 TO-262AA A HEATSINK K Molding compound meets UL 94 V-0 flammability rating PIN 3 Base P/N-E3 - RoHS compliant, commercial grade click logo to get started Terminals: matte tin plated leads, solderable per DESIGN SUPPORT TOOLS J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Models Available Polarity: as marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS I 30 A F(AV) V 120 V RRM I 220 A FSM V at I = 30 A 0.81 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configurations Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30120SG VF30120SG VB30120SG VI30120SG UNIT Max. repetitive peak reverse voltage V 120 V RRM Max. average forward rectified current (fig. 1) I 30 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 220 A FSM superimposed on rated load Non-repetitive avalanche energy at T = 25 C, L = 60 mH E 175 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 0.5 A p J RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 19-Jun-2018 Document Number: 89011 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V30120SG-E3, VF30120SG-E3, VB30120SG-E3, VI30120SG-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 120 (min.) - V R A BR I = 5 A 0.54 - F I = 15 A T = 25 C 0.80 - F A I = 30 A 1.16 1.28 F (1) Instantaneous forward voltage V V F I = 5 A 0.47 - F I = 15 A T = 125 C 0.66 - F A I = 30 A 0.81 0.90 F T = 25 C 13 - A A V = 90 V R T = 125 C 13 - mA A (2) Reverse current I R T = 25 C - 500 A A V = 120 V R T = 125 C 23 55 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30120SG VF30120SG VB30120SG VI30120SG UNIT Typical thermal resistance R 1.6 4.0 1.6 1.6 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30120SG-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF30120SG-E3/4W 1.75 4W 50/tube Tube TO-263AB VB30120SG-E3/4W 1.39 4W 50/tube Tube TO-263AB VB30120SG-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI30120SG-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 50 D = 0.5 D = 0.8 Resistive or Inductive Load V(B,I)30120SG 45 D = 0.3 30 40 D = 0.2 25 35 D = 1.0 D = 0.1 30 20 25 VF30120SG 15 20 T 15 10 10 5 5 D = t /T t p p Mounted on Specific Heatsink 0 0 0 25 50 75 100 125 150 0 4 8 12 162024283236 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 19-Jun-2018 Document Number: 89011 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)