V20202C, VF20202C, VB20202C, VI20202C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.59 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology Gen 2 TO-220AB ITO-220AB Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220-AB, and 3 3 2 TO-262AA package) 2 1 1 V20202C VF20202C Material categorization: for definitions of compliance PIN 1 PIN 1 PIN 2 PIN 2 please see www.vishay.com/doc 99912 CASE PIN 3 PIN 3 TYPICAL APPLICATIONS TO-263AB TO-262AA For use in high frequency DC/DC converters, switching K K power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 2 MECHANICAL DATA 1 3 Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA 2 1 Molding compound meets UL 94 V-0 flammability rating VB20202C VI20202C Base P/N-M3 - halogen-free, RoHS-compliant, and PIN 1 K PIN 1 PIN 2 commercial grade K PIN 2 HEATSINK PIN 3 Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 PRIMARY CHARACTERISTICS M3 suffix meets JESD 201 class 1A whisker test I 2 x 10 A F(AV) Polarity: as marked V 200 V RRM Mounting Torque: 10 in-lbs max. I 150 A FSM V at I = 10 A (T = 125 C) 0.68 V F F A T max. 175 C J TO-220AB, ITO-220AB, Package TO-263AB, TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20202C VF20202C VB20202C VI20202C UNIT Maximum repetitive peak reverse voltage V 200 V RRM per device 20 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 10 Maximum DC reverse voltage V 160 V DC Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load per diode Voltage rate of change (rated V) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) V 1500 V AC from terminal to heatsink, t = 1 min Operating junction and storage temperature range T , T -40 to +175 C J STG Revision: 07-May-2018 Document Number: 87797 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20202C, VF20202C, VB20202C, VI20202C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.75 - F T = 25 C A I = 10 A 0.81 0.90 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.59 - F T = 125 C A I = 10 A 0.68 0.76 F T = 25 C 0.4 - A A V = 160 V R T = 125 C 0.8 - mA A (2) Reverse current per diode I R T = 25 C - 150 A A V = 200 V R T = 125 C 1.6 10 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20202C VF20202C VB20202C VI20202C UNIT per diode R 2.2 4.5 2.2 JC Typical thermal resistance per device R 1.3 3.2 1.3 C/W JC (1)(2) per device R 52 60 52 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20202C-M3/4W 1.88 4W 50/tube Tube ITO-220AB VF20202C-M3/4W 1.75 4W 50/tube Tube TO-263AB VB20202C-M3/4W 1.37 4W 50/tube Tube TO-263AB VB20202C-M3/8W 1.37 8W 800/reel Tape and reel TO-262AA VI20202C-M3/4W 1.45 4W 50/tube Tube Revision: 07-May-2018 Document Number: 87797 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000