VB30100SG-M3 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.437 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology 2 D PAK (TO-263AB) Low forward voltage drop, low power losses K High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, A LF maximum peak of 245 C NC Material categorization: for definitions of compliance VB30100SG please see www.vishay.com/doc 99912 NC K A HEATSINK TYPICAL APPLICATIONS click logo to get started For use in high frequency converters, switching power DESIGN SUPPORT TOOLS supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available MECHANICAL DATA 2 Case: D PAK (TO-263AB) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 30 A Base P/N-M3 - halogen-free, RoHS-compliant, and F(AV) commercial grade V 100 V RRM I 250 A Terminals: matte tin plated leads, solderable per FSM J-STD-002 and JESD 22-B102 V at I = 30 A 0.76 V F F M3 suffix meets JESD 201 class 1A whisker test T max. 150 C J 2 Polarity: as marked Package D PAK (TO-263AB) Mounting Torque: 10 in-lbs maximum Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB30100SG UNIT Maximum repetitive peak reverse voltage V 100 V RRM Maximum average forward rectified current (fig. 1) I 30 A F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 250 A FSM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.50 - F I = 10 A T = 25 C 0.60 - F A I = 30 A 0.92 1.00 F (1) Instantaneous forward voltage V V F I = 5 A 0.44 - F I = 10 A T = 125 C 0.55 - F A I = 30 A 0.76 0.83 F T = 25 C 8.8 - A A V = 70 V R T = 125 C 6.5 - mA A (2) Reverse current I R T = 25 C 43 350 A A = 100 V V R T = 125 C 18 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 20-Jun-2018 Document Number: 87986 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VB30100SG-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB30100SGUNIT Typical thermal resistance per leg R 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB30100SG-M3/4W 1.37 4W 50/tube Tube TO-263AB VB30100SG-M3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 100 Resistive or Inductive Load T = 150 C A 30 25 T = 125 C A 10 20 15 T = 25 C A 1 10 5 0 0.1 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 32 100 D = 0.8 D = 0.5 T = 150 C A 28 D = 0.3 10 D = 0.2 24 D = 1.0 T = 125 C A D = 0.1 20 1 16 0.1 12 T 8 T = 25 C A 0.01 4 D = t /T t p p 0 0.001 0 4 8 12 16 20 24 28 32 36 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Reverse Characteristics Revision: 20-Jun-2018 Document Number: 87986 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)