IDH12G65C5XKSA2 Infineon

SiC Silicon Carbide Diode th TM 5 Generation thinQ 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket th 5 Generation thinQ SiC Schottky Diode IDH12G65C5 1 Description ThinQ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ Generation 5 has been designed to complement our 650V 1 CoolMOS families: this ensures meeting the most stringent application 2 requirements in this voltage range. Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 27 mA Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit V 650 V DC Q V =400V 18 nC C R E V =400V 4.1 J C R I T < 140C 12 A F C Table 2 Pin Definition Pin 1 Pin 2 Pin 3 C A n.a. Type / ordering Code Package Marking Related links IDH12G65C5 PG-TO220-2 D1265C5 www.infineon.com/sic 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms Final Data Sheet 2 Rev. 2.2, 2012-12-10