V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.43 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 2 2 Solder bath temperature 275 C maximum, 10 s, per 1 1 V30120S VF30120S JESD 22-B106 (for TO-220AB, ITO-220AB, and PIN 1 PIN 1 PIN 2 PIN 2 TO-262AA package) CASE PIN 3 PIN 3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) TO-262AA K K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC A converters and reverse battery protection. 3 NC 2 1 MECHANICAL DATA VB30120S VI30120S PIN 1 NC K 2 PIN 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and TO-262AA A HEATSINK K PIN 3 Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade click logo to get started DESIGN SUPPORT TOOLS Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Models E3 suffix meets JESD 201 class 1A whisker test Available Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum I 30 A F(AV) V 120 V RRM I 300 A FSM V at I = 30 A 0.74 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLV30120SVF30120SVB30120SVI30120SUNIT Maximum repetitive peak reverse voltage V 120 V RRM Maximum average forward rectified current (fig. 1) I 30 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 300 A FSM superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 100 mH E 180 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 0.5 A p J RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 88974 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 5 A 0.50 - F I = 15 A T = 25 C 0.70 - F A I = 30 A 0.99 1.10 F V F (1) Instantaneous forward voltage per diode V I = 5 A 0.43 - F I = 15 A T = 125 C 0.60 - F A I = 30 A 0.74 0.82 F T = 25 C 18 - A A V = 90 V R T = 125 C 12 - mA A (2) Reverse current per diode I R T = 25 C - 500 A A V = 120 V R T = 125 C 22 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLV30120SVF30120SVB30120SVI30120SUNIT Typical thermal resistance per diode R 1.6 4.0 1.6 1.6 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30120S-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF30120S-E3/4W 1.75 4W 50/tube Tube TO-263AB VB30120S-E3/4W 1.39 4W 50/tube Tube TO-263AB VB30120S-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI30120S-E3/4W 1.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 40 30 Resistive or Inductive Load D = 0.8 D = 0.5 35 25 V(B,I)30120S D = 0.3 30 20 25 D = 0.2 VF30120S D = 1.0 20 15 D = 0.1 T 15 10 10 5 D = t /T t p p 5 Mounted on Specific Heatsink 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 Average Forward Current (A) Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 88974 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)