VB60100C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.36 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology 2 D PAK (TO-263AB) Low forward voltage drop, low power losses K High efficiency operation Low thermal resistance 2 Meets MSL level 1, per J-STD-020, 1 LF maximum peak of 245 C VB60100C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency converters, switching power click logo to get started DESIGN SUPPORT TOOLS supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available MECHANICAL DATA 2 Case: D PAK (TO-263AB) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and I 2 x 30 A F(AV) commercial grade V 100 V RRM Terminals: matte tin plated leads, solderable per I 320 A FSM J-STD-002 and JESD 22-B102 V at I = 30 A 0.66 V F F M3 suffix meets JESD 201 class 2 whisker test T max. 150 C J Polarity: as marked 2 Package D PAK (TO-263AB) Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB60100C UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 60 A Maximum average forward rectified current (fig. 1) I F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 320 A FSM superimposed on rated load per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 20-Jun-2018 Document Number: 87988 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VB60100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.45 - F I = 10 A 0.52 - F I = 15 A T = 25 C 0.58 0.63 F A I = 20 A 0.63 - F I = 30 A 0.73 0.79 F Instantaneous forward voltage V V F (1) per diode I = 5 A 0.36 - F I = 10 A 0.45 - F I = 15 A T = 125 C 0.53 0.58 F A I = 20 A 0.58 - F I = 30 A 0.66 0.70 F T = 25 C 24 500 A A V = 80 V R T = 125 C 13 20 mA A Reverse current at rated V R I R (2) per diode T = 25 C 65 1000 A A V = 100 V R T = 125 C 30 - mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB60100C UNIT Typical thermal resistance per diode R 2.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB60100C-M3/4W 1.38 4W 50/tube Tube TO-263AB VB60100C-M3/8W 1.38 8W 800/reel Tape and reel Revision: 20-Jun-2018 Document Number: 87988 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000