VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: GW, RGW VBPW34FAS Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters Fast response times Angle of half sensitivity: = 65 Floor life: 168 h, MSL 3, acc. J-STD-020 VBPW34FASR Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21726 APPLICATIONS DESCRIPTION High speed detector for infrared radiation VBPW34FAS and VBPW34FASR are high speed and high Infrared remote control and free air data sensitive PIN photodiodes. It is a surface mount device transmissionsystems, e.g. in combination with TSFFxxxx 2 (SMD) including the chip with a 7.5 mm sensitive area and series IR emitters a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 VBPW34FAS 55 65 780 to 1050 VBPW34FASR 55 65 780 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VBPW34FAS Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing VBPW34FASR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow sloder profile fig. 8 T 260 C sd Thermal resistance junction/ambient R 350 K/W thJA Note T = 25 C, unless otherwise specified amb Document Number: 81127 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.0, 23-Jul-09 1 VBPW34FAS, VBPW34FASR Silicon PIN Photodiode Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 50 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 45 55 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 780 to 1050 nm 0.5 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 1000 1.4 V =5 V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8403 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81127 2 Rev. 1.0, 23-Jul-09 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro