TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 3 High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 20 Package matched with IR emitter series VSLB3940, TSUS4300, and TSAL4400 DESCRIPTION Compliant to RoHS Directive 2002/95/EC and in TEFD4300 is a silicon PIN photodiode with high radiant accordance to WEEE 2002/96/EC sensitivity in clear, T-1 plastic package. It is sensitive to Note visible and near infrared radiation. ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 APPLICATIONS High speed photo detector for data transmission Optical switches Counters and sorters Interrupters Encoders Position sensors PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 TEFD4300 17 20 350 to 1120 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEFD4300 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 3 s, 2 mm from case T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 450 K/W thJA Rev. 1.0, 07-Nov-11 Document Number: 83471 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEFD4300 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 0.153nA R ro V = 0 V, f = 1 MHz, E = 0 C 3.3 pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 1.2 pF R D 2 Open circuit voltage E = 1 mW/cm , l = 950 nm V 350 mV e O 2 Temperature coefficient of V E = 1 mW/cm , l = 950 nm TK - 2.6 mV/K O e Vo 2 Short circuit current E = 1 mW/cm , l = 950 nm I 15 A e k 2 Temperature coefficient of I E = 1 mW/cm , l = 950 nm TK 0.1 %/K k e Ik 2 Reverse light current E = 1 mW/cm , l = 950 nm, V = 5 V I 917 27 A e R ra Angle of half sensitivity 20 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 350 1120 nm 0.1 Rise time V = 10 V, R = 1 k, l = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, l = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb -6 1.4 10 -7 10 V = 10 V R V = 5 V 1.2 R = 950 nm -8 10 -9 1.0 10 -10 10 0.8 -11 10 0.6 -12 10 0 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) 94 8416 amb T - Ambient Temperature (C) amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.0, 07-Nov-11 Document Number: 83471 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Dark Current (A) r0 I - Relative Reverse Light Current ra, rel