X-On Electronics has gained recognition as a prominent supplier of TEMD5010X01 Photodiodes across the USA, India, Europe, Australia, and various other global locations. TEMD5010X01 Photodiodes are a product manufactured by Vishay. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

TEMD5010X01 Vishay

TEMD5010X01 electronic component of Vishay
TEMD5010X01 Vishay
TEMD5010X01 Photodiodes
TEMD5010X01  Optoelectronics

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See Product Specifications
Part No. TEMD5010X01
Manufacturer: Vishay
Category: Photodiodes
Description: Photodiodes SMD TVIEW 5 2MM2-E4
Datasheet: TEMD5010X01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.5627 ea
Line Total: USD 844.05 
Availability - 400125
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
4365
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 1500
Multiples : 1500
1500 : USD 1.0992

2801
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 52
Multiples : 1
52 : USD 1.2576

986
Ship by Wed. 23 Apr to Mon. 28 Apr
MOQ : 1
Multiples : 1
1 : USD 1.6959
10 : USD 1.4263
30 : USD 0.984
100 : USD 0.8547
500 : USD 0.7966
1500 : USD 0.7703

12964
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ : 1
Multiples : 1
1 : USD 1.135
10 : USD 0.8904
100 : USD 0.7051
500 : USD 0.6589
1000 : USD 0.6589
1500 : USD 0.6072

4365
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 1500
Multiples : 1500
1500 : USD 0.6257

2801
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 87
Multiples : 1
87 : USD 0.7233
87 : USD 0.7219
100 : USD 0.7202
250 : USD 0.7187
500 : USD 0.7171
1000 : USD 0.6881

400125
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 1500
Multiples : 1500
1500 : USD 0.5627

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Forward Current
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TEMD5010X01 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TEMD5010X01 and other electronic components in the Photodiodes category and beyond.

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TEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 2 Radiant sensitive area (in mm ): 7.5 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times 20535 Angle of half sensitivity: = 65 Floor life: 72 h, MSL 4, acc. J-STD-020 Compliant to RoHS Directive 2002/95/EC and in DESCRIPTION accordance to WEEE 2002/96/EC Note TEMD5010X01 is a high speed and high sensitive PIN ** Please see document Vishay Material Category Policy: photodiode. It is a miniature surface mount device (SMD) www.vishay.com/doc 99902 2 including the chip with a 7.5 mm sensitive area detecting visible and near infrared radiation. APPLICATIONS High speed photo detector PRODUCT SUMMARY COMPONENT I (A) (deg) 0.1 (nm) ra TEMD5010X01 55 65 430 to 1100 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD5010X01 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 110 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient R 350 K/W thJA Rev. 1.5, 23-Aug-11 Document Number: 84679 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMD5010X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 50 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 45 55 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 430 to 1100 nm 0.1 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 1 0.6 20 40 60 80 100 0 20 40 60 80 100 94 8403 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.5, 23-Aug-11 Document Number: 84679 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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