TEMD6010FX01 www.vishay.com Vishay Semiconductors Ambient Light Sensor FEATURES Package type: surface mount Package form: 1206 Dimensions (L x W x H in mm): 4 x 2 x 1.05 2 Radiant sensitive area (in mm ): 0.27 AEC-Q101 qualified High photo sensitivity Adapted to human eye responsivity Supression filter for near infrared radiation Angle of half sensitivity: = 60 18527-1 Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION TEMD6010FX01 ambient light sensor is a PIN photodiode APPLICATIONS with high speed and high photo sensitivity in a clear, surface Automotive sensors 2 mount plastic package. The detector chip has 0.27 mm Ambient light sensors sensitive area. It is sensitive to visible light much like the Backlight dimming human eye and has peak sensitivity at 540 nm. Mobil phones Notebooks Computers PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 TEMD6010FX01 0.04 60 430 to 610 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD6010FX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 1206 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 16 V R Power dissipation P 100 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 7 T 260 C sd Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm R 450 K/W thJA Rev. 1.8, 20-Aug-12 Document Number: 81308 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMD6010FX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage I = 100 A, E = 0 lx V 16 V R (BR) Reverse dark current V = 10 V, E = 0 lx I 0.1 5 nA CE ro V = 0 V, f = 1 MHz, E = 0 lx C 60 pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 lx C 24 pF R D 2 E = 1 mW/cm , = 550 nm, e I 1A ra V = 5 V R Reverse light current E = 100 lx, CIE illuminant A, V I 0.03 0.04 0.09 A ra V = 5 V R E = 100 lx, CIE illuminant A, V Temperature coefficient of I TK 0.2 %/K ra Ira V = 5 V R Angle of half sensitivity 60 deg Wavelength of peak sensitivity 540 nm p Range of spectral bandwidth 430 to 610 nm 0.5 BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 70 E = 0 0 60 f = 1 MHz 100 50 10 40 30 1 V = 5 V 20 R 0.1 10 0.01 0 0 20 40 60 80 100 010 20 30 V - Reverse Voltage (V) 20094 R 18818 T - Ambient Temperature (C) amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Diode Capacitance vs. Reverse Voltage 10 1.0 1 0.8 Photodiode human eye 0.6 0.1 0.4 CIE illuminant A 0.01 V = 5 V R 0.2 0.0 0.001 10 100 1000 10000 400 600 800 1000 E - Illuminance (lx) Wavelength (nm) 20093 20047 V Fig. 2 - Reverse Light Current vs. Illuminance Fig. 4 - Relative Spectral Sensitivity vs. Wavelength Rev. 1.8, 20-Aug-12 Document Number: 81308 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Photocurrent (A) I - Reverse Dark Current (nA) ra ro Relative Spectral Sensitivity C - Diode Capacitance (pF) D