TEMD5080X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 2 Radiant sensitive area (in mm ): 7.7 AEC-Q101 qualified Enhanced blue photo sensitivity: S (400 nm) rel > 30 % Peak sensitivity at 940 nm Suitable for visible and near infrared radiation 20535 Low junction capacitance Fast response times Angle of half sensitivity: = 65 DESCRIPTION Floor life: 72 h, MSL 4, acc. J-STD-020 TEMD5080X01 is a PIN photodiode with enhanced blue Lead (Pb)-free reflow soldering sensitivity. The miniature surface mount package (SMD) Compliant to RoHS Directive 2002/95/EC and in 2 include a chip with 7.7 mm sensitive area, covered by clear accordance to WEEE 2002/96/EC epoxy. Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 APPLICATIONS High speed photo detector PRODUCT SUMMARY COMPONENT I (A) (deg) 0.1 (nm) ra TEMD5080X01 60 65 350 to 1100 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD5080X01 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 25 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 110 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient R 350 K/W thJA Rev. 1.3, 23-Aug-11 Document Number: 81643 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMD5080X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 25 V R (BR) Reverse dark current V = 10 V, E = 0 I 210 nA R ro V = 0 V, f = 1 MHz, E = 0 C 90 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 30 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 50 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 400 nm, e I 18 A ra V = 5 V R E = 100 lx, CIE illuminant A, V Reverse light current I 8.5 A ra V = 5 V R 2 E = 1 mW/cm , = 950 nm, e I 60 A ra V = 5 V R CIE illuminant A TK 0.15 %/K Ira Temperature coefficient of I ra = 950 nm TK 0.1 %/K Ira Angle of half sensitivity 65 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 350 to 1100 nm 0.1 -13 Noise equivalent power V = 10 V, = 400 nm NEP 1.1 x 10 W/ Hz R V = 5 V, R = 50 , R L Rise time t 40 ns r = 850 nm V = 5 V, R = 50 , R L Fall time t 40 ns f = 850 nm BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 20 40 60 80 100 0 20 40 60 80 100 94 8403 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.3, 23-Aug-11 Document Number: 81643 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro