X-On Electronics has gained recognition as a prominent supplier of TEMT1030 Phototransistors across the USA, India, Europe, Australia, and various other global locations. TEMT1030 Phototransistors are a product manufactured by Vishay. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

TEMT1030 Vishay

Hot TEMT1030 electronic component of Vishay
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See Product Specifications
Part No.TEMT1030
Manufacturer: Vishay
Category: Phototransistors
Description: Phototransistors Yoke 730 to 1000nm +/-15 deg
Datasheet: TEMT1030 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2083 ea
Line Total: USD 0.21 
Availability - 160
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
160
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2083
10 : USD 0.0988
25 : USD 0.0978
100 : USD 0.051

361
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.781
10 : USD 0.4763
100 : USD 0.341
500 : USD 0.3399
1000 : USD 0.2805
2000 : USD 0.2761
10000 : USD 0.2695

   
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RoHS - XON
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Package / Case
Maximum Power Dissipation
Maximum On-State Collector Current
Maximum Dark Current
Mounting Style
Peak Wavelength
Operating Supply Voltage
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Rise Time
Fall Time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Type
Wavelength
Brand
Maximum Collector Current
Factory Pack Quantity :
Height
Lens Color/Style
Width
Cnhts
Half Intensity Angle Degrees
Hts Code
Light Current
Mxhts
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We are delighted to provide the TEMT1030 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TEMT1030 and other electronic components in the Phototransistors category and beyond.

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TEMT1000, TEMT1020, TEMT1030, TEMT1040 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES TEMT1000 TEMT1020 Package type: surface mount Package form: GW, RGW, yoke, axial TEMT1030 Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm IR emitters Fast response times TEMT1040 Angle of half sensitivity: = 15 Package matches with IR emitter series TSML1000 Floor life: 168 h, MSL 3, acc. J-STD-020 16757 Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC APPLICATIONS DESCRIPTION Detector in electronic control and drive circuits TEMT1000 series are silicon NPN phototransistors with high IR detector for daylight application radiant sensitivity in black, surface mount, plastic packages Photo interrupters with lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. Counter Encoder PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.5 TEMT1000 7 15 730 to 1000 TEMT1020 7 15 730 to 1000 TEMT1030 7 15 730 to 1000 TEMT1040 7 15 730 to 1000 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMT1000 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing TEMT1020 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing TEMT1030 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Yoke TEMT1040 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Axial leads Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm R 400 K/W thJA Rev. 1.6, 29-Jun-11 Document Number: 81554 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMT1000, TEMT1020, TEMT1030, TEMT1040 www.vishay.com Vishay Semiconductors 120 100 80 60 R = 400 K/W thJA 40 20 0 0 10 203040 50607080 90 100 21167 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter voltage I = 1 mA V 70 V C CEO Collector emitter dark current V = 20 V, E = 0 I 1 200 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 3pF CE CEO Angle of half sensitivity 15 deg Wavelength of peak sensitivity 880 nm p Range of spectral bandwidth 730 to 1000 nm 0.5 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.3 V CEsat I = 0.1 mA C Turn-on time V = 5 V, I = 5 mA, R = 100 t 2.0 s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 2.3 s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 180 kHz S C L c 2 E = 1 mW/cm , = 950 nm, e Collector light current I 27.0 mA ca V = 5 V CE BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 2.0 10 1.8 3 V = 5 V CE 10 2 E = 1 mW/cm 1.6 e = 950 nm V = 20 V 1.4 CE 2 10 1.2 1.0 1 10 0.8 10 0.6 20 40 60 80 100 0 20 40 60 80 100 94 8304 T - Ambient Temperature (C) amb 94 8239 T - Ambient Temperature (C) amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Rev. 1.6, 29-Jun-11 Document Number: 81554 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Collector Dark Current (nA) CEO P - Power Dissipation (mW) V I - Relative Collector Current ca rel

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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