TEMT7100X01 www.vishay.com Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES Package type: surface-mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 AEC-Q101 qualified High photo sensitivity Daylight blocking filter matches with 830 n m to 950 nm IR emitters Angle of half sensitivity: = 60 Package matched with IR emitter series 20043-1 VSMB1940X01 Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 TEMT7100X01 is a silicon NPN epitaxial planar APPLICATIONS phototransistor with daylight blocking filter in a miniature, black 0805 package for surface mounting. Filter bandwidth Detector in automotive applications is matched with 830 nm to 950 nm IR emitters. Photo interrupters Miniature switches Counters Encoders Position sensors PRODUCT SUMMARY I (A) ca COMPONENT () (nm) 0.5 2 at E = 1 mW/cm , = 950 nm, V = 5 V e CE TEMT7100X01 225 to 675 60 750 to 1010 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMT7100X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 20 V CEO Emitter collector voltage V 7V ECO Collector current I 20 mA C Power power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to reflow profile Fig. 8 T 260 C sd Thermal resistance junction-to-ambient According to J-STD-051 R 270 K/W thJA Rev. 1.3, 30-Jul-2020 Document Number: 81770 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMT7100X01 www.vishay.com Vishay Semiconductors 120 100 80 60 R = 270 K/W thJA 40 20 0 0 10 203040 50607080 90 100 21331-1 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 0.1 mA V 20 - - V C CEO Collector dark current V = 5 V, E = 0 I - 1 100 nA CE CEO Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C -25- pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 225 450 675 A CA V = 5 V CE Angle of half sensitivity - 60 - Wavelength of peak sensitivity -870 - nm p Range of spectral bandwidth - 750 to 1010 - nm 0.5 Collector emitter saturation voltage I = 0.05 mA V -- 0.4 V C CEsat 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of Ica Tk -1.1 - %/K Ica V = 5 V CE BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 000 10 I = 0 F 1000 1 V = 70 V CE V = 25 V CE V = 5 V 100 CE 0.1 V = 5 V CE 10 0.01 1 0.001 0.01 0.1 1 10 0 1020 3040 5060 7080 90100 21551-1 20594 E - Irradiance (mW/cm) T - Ambient Temperature (C) e amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Collector Light Current vs. Irradiance Rev. 1.3, 30-Jul-2020 Document Number: 81770 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Collector Dark Current (nA) CE0 P - Power Dissipation (mW) V I - Collector Light Current (mA) ca