BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 15 12785 Base terminal connected Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION BPV11 is a silicon NPN phototransistor with high radiant APPLICATIONS sensitivity in clear, T-1 plastic package with base terminal. Detector for industrial electronic circuitry, measurement It is sensitive to visible and near infrared radiation. and control PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPV11 10 15 450 to 1080 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV11 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector base voltage V 80 V CBO Collector emitter voltage V 70 V CEO Emitter base voltage V 5V EBO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation T 47 C P 150 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from body T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.8, 03-May-13 Document Number: 81504 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV11 www.vishay.com Vishay Semiconductors 200 160 120 R thJA 80 40 0 0 20 40 60 80 100 T - Ambient Temperature (C) amb 94 8300 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 10 V, E = 0 I 150 nA CE CEO DC current gain V = 5 V, I = 5 mA, E = 0 h 450 CE C FE Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 15 pF CE CEO Collector base capacitance V = 0 V, f = 1 MHz, E = 0 C 19 pF BE CBO 2 Collector light current E = 1 mW/cm , = 950 nm, V = 5 V I 310 mA e CE ca Angle of half sensitivity 15 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 450 to 1080 nm 0.1 2 Collector emitter saturation voltage E = 1 mW/cm , = 950 nm, I = 1 mA V 130 300 mV e C CEsat Turn-on time V = 5 V, I = 5 mA, R = 100 t 6s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 5s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 110 kHz S C L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 2.0 10 1.8 V = 5 V 3 CE 10 2 1.6 E = 1 mW/cm e = 950 nm V = 10 V CE 1.4 2 10 1.2 1.0 1 10 0.8 10 0.6 20 40 60 80 100 100 0 20 40 60 80 T - Ambient Temperature (C) 94 8239 T - Ambient Temperature (C) 94 8249 amb amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Rev. 1.8, 03-May-13 Document Number: 81504 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Collector Dark Current (nA) CEO I - Relative Collector Current ca rel