BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation 94 8391 Fast response times Angle of half sensitivity: = 20 Compliant to RoHS Directive 2002/95/EC and in DESCRIPTION accordance to WEEE 2002/96/EC Note BPW96 is a silicon NPN phototransistor with high radiant ** Please see document Vishay Material Category Policy: sensitivity in clear, T-1 plastic package. It is sensitive to www.vishay.com/doc 99902 visible and near infrared radiation. APPLICATIONS Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPW96B 2.5 to 7.5 20 450 to 1080 BPW96C 4.5 to 15 20 450 to 1080 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW96B Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 70 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T 0.5, t 10 ms I 100 mA p p CM Power dissipation T 47 C P 150 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 3 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.8, 23-Aug-11 Document Number: 81532 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPW96B, BPW96C www.vishay.com Vishay Semiconductors 200 160 120 R thJA 80 40 0 0 20 40 60 80 100 T - Ambient Temperature (C) amb 94 8300 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1 200 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 3pF CE CEO Angle of half sensitivity 20 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 450 to 1080 nm 0.1 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.3 V CEsat I = 0.1 mA C Turn-on time V = 5 V, I = 5 mA, R = 100 t 2.0 s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 2.3 s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 180 kHz S C L c TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 2 BPW96B I 2.5 4.5 7.5 mA E = 1 mW/cm , = 950 nm, ca e Collector light current V = 5 V CE BPW96C I 4.5 8 15 mA ca Rev. 1.8, 23-Aug-11 Document Number: 81532 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V