BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times 94 8401 Angle of half sensitivity: = 40 Base terminal connected Hermetically sealed package DESCRIPTION Flat glass window BPW76 is a silicon NPN phototransistor with high radiant Lead (Pb)-free component in accordance with sensitivity in hermetically sealed TO-18 package with base RoHS 2002/95/EC and WEEE 2002/96/EC terminal and flat glass window. It is sensitive to visible and near infrared radiation. APPLICATIONS Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPW76A 0.4 to 0.8 40 450 to 1080 BPW76B > 0.6 40 450 to 1080 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW76A Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 BPW76B Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector base voltage V 80 V CBO Collector emitter voltage V 70 V CEO Emitter base voltage V 5V EBO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM 25 C P 250 mW Total power dissipation T amb V Junction temperature T 125 C j Operating temperature range T - 40 to + 125 C amb Storage temperature range T - 40 to + 125 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 400 K/W thJA Thermal resistance junction/ case R 150 K/W thJC Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81526 398 Rev. 1.4, 08-Sep-08BPW76A, BPW76B Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 800 600 R thJC 400 200 R thJA 0 0 25 50 75 100 125 150 94 8342 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 6pF CE CEO Angle of half sensitivity 40 deg Wavelength of peak sensitivity 850 nm p 450 to Range of spectral bandwidth nm 0.1 1080 2 Collector emitter saturation voltage E = 1 mW/cm , = 950 nm, I = 0.1 mA V 0.15 0.3 V e C CEsat Turn-on time V = 5 V, I = 5 mA, R = 100 t 6s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 5s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 110 kHz S C L c Note T = 25 C, unless otherwise specified amb TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 2 BPW76A I 0.4 0.8 mA E = 1 mW/cm , = 950 nm, ca e Collector light current V = 5 V CE BPW76B I 0.6 mA ca BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 6 10 2.50 2.25 V = 5V CE 2 5 10 E = 1 mW/cm 2.00 e = 950 nm 1.75 4 10 1.50 1.25 3 10 1.00 2 10 0.75 V = 20 V CE 0.50 E=0 1 10 0.25 0 0 10 20 50 100 150 0 1020 3040 5060 70 80 90 100 T - Ambient Temperature (C) 94 8344 94 8343 amb T - Ambient Temperature (C) amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Document Number: 81526 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.4, 08-Sep-08 399 I - Collector Dark Current (nA) P - Total Power Dissipation (mW) CEO tot I - Relative Collector Current ca rel