BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES Package type: leaded Package form: side view Dimensions (L x W x H in mm): 5 x 4 x 6.8 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters 94 8480 Fast response times Angle of half sensitivity: = 65 Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS DESCRIPTION High speed detector for infrared radiation BPW82 is a PIN photodiode with high speed and high radiant Infrared remote control and free air data transmission sensitivity in a black, side view plastic package with daylight systems, e.g. in combination with TSFFxxxx series IR blocking filter. Filter bandwidth is matched with 870 nm to emitters 950 nm IR emitters. PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BPW82 45 65 790 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW82 Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81529 406 Rev. 1.6, 08-Sep-08BPW82 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 870 nm V 350 mV e o 2 Short circuit current E = 1 mW/cm , = 870 nm I 38 A e k 2 E = 1 mW/cm , = 870 nm, e Reverse light current I 43 45 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 790 to 1050 nm 0.5 -14 Noise equivalent power V = 10 V, = 870 nm NEP 4 x 10 W/ Hz R Rise time V = 10 V, R = 1 k , = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k , = 820 nm t 100 ns R L f Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 1000 1.4 V =5 V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) 94 8403 T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81529 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.6, 08-Sep-08 407 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro