VEMD11940FX01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: Side view Dimensions (L x W x H in mm): 3 x 2 x 0.6 AEC-Q101 qualified High radiant sensitivity Daylight blocking filter matched with 830 nm to 950 nm IR emitters Angle of half sensitivity: = 75 Package matched with IR emitter VSMB11940X01 Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION Lead (Pb)-free reflow soldering VEMD11940FX01 is a high speed and high sensitive PIN Material categorization: for definitions of compliance photodiode in a miniature side looking, surface mount please see www.vishay.com/doc 99912 package (SMD) with daylight blocking filter. Filter is matched with IR emitters operating at wavelength of 830 nm to APPLICATIONS 2 950 nm. The photo sensitive area of the chip is 0.053 mm . High speed photo detector Infrared remote control Infrared data transmission Photo interrupters IR touch panels PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 VEMD11940FX01 1.13 75 780 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD11940FX01 Tape and reel MOQ: 4000 pcs, 4000 pcs/reel Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 104 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to reflow solder profile fig. 8 T 260 C sd Thermal resistance junction / ambient According to J-STD-051 R 580 K/W thJA Rev. 1.1, 04-Dec-15 Document Number: 84194 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD11940FX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -1.7 - V F F Breakdown voltage I = 100 A, E = 0 V 32 - - V R (BR) Reverse dark current V = 10 V, E = 0 I -< 1 10 nA R ro V = 0 V, f = 1 MHz, E = 0 C -1.1 - pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C -0.5 - pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V - 350 - mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK --2.7 - mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I -1.13 - A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK -0.1 - %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 0.81.131.8 A e R ra Angle of half sensitivity - 75 - deg Wavelength of peak sensitivity - 950 - nm p Range of spectral bandwidth - 780 to 1050 - nm 0.5 Rise time V = 10 V, R = 1 k, = 820 nm t - 100 - ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t - 100 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 V = 5 V R = 950 nm 100 10 10 1 1 0.1 0 20 40 60 80 100 120 0.01 0.1 1 10 2 T - Ambient Temperature (C) E - Irradiance (mW/cm ) amb e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 1.4 2.5 2.0 V = 5 V 1.2 R = 950 nm 1.5 1.0 1.0 0.8 0.5 0.6 0.0 0 20 40 60 80 100 - 10 - 9 - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 1 T - Ambient Temperature (C) V - Forward Voltage (V) 94 8416 F amb Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.1, 04-Dec-15 Document Number: 84194 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra, rel Reverse Dark Current (nA) I - Reverse Light Current (A) C - Junction Capacitance (pF) ra j