VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount VEMD2003X01 VEMD2023X01 Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 AEC-Q101 qualified High radiant sensitivity Daylight blocking filter matched with 830 nm to 950 nm IR emitters Fast response times Angle of half sensitivity: = 35 Package matched with IR emitter series DESCRIPTION VSMB2943X01 VEMD2003X01 and VEMD2023X01 are high speed and high Floor life: 4 weeks, MSL 2a, acc. J-STD-020 sensitive PIN photodiodes in a miniature surface mount package (SMD) with dome lens and daylight blocking filter. Lead (Pb)-free reflow soldering Filter is matched with IR emitters operating at wavelength of Material categorization: For definitions of compliance 830 nm to 950 nm. The photo sensitive area of the chip is please see www.vishay.com/doc 99912 2 0.23 mm . APPLICATIONS High speed photo detector Infrared remote control Infrared data transmission Photo interrupters IR touch panels PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 VEMD2003X01 10 35 750 to 1050 VEMD2023X01 10 35 750 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD2003X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMD2023X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 7 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA Rev. 1.0, 04-Apr-13 Document Number: 84147 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 32 V R (BR) Reverse dark current V = 10 V, E = 0 I 110 nA R ro V = 0 V, f = 1 MHz, E = 0 C 4pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 1.3 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 10 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 710 14 A e R ra Angle of half sensitivity 35 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 750 to 1050 nm 0.5 Rise time V = 10 V, R = 1 k , = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k , = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 V = 5 V R 100 10 10 1 V = 10 V R 1 0.1 20 40 60 80 100 0.01 0.1 1 10 2 T - Ambient Temperature (C) 94 8427 E - Irradiance (mW/cm ) amb e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 8 1.4 V = 5 V 6 1.2 R = 950 nm E = 0 f = 1 MHz 4 1.0 2 0.8 0 0.6 1 20 40 80 100 0.1 10 100 0 60 94 8430 V - Reverse Voltage (V) 94 8416 T - Ambient Temperature (C) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.0, 04-Apr-13 Document Number: 84147 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra, rel I - Reverse Dark Current (nA) ro I - Reverse Light Current (A) C - Diode Capacitance (pF) ra D