VEMD2523SLX01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: side view Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 AEC-Q101 qualified High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 35 DESCRIPTION Package matched with IR emitter series VSMB2943SLX01 VEMD2523SLX01 is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount Floor life: 4 weeks, MSL 2a, acc. J-STD-020 package (SMD) with dome lens. The clear epoxy allows light Lead (Pb)-free reflow soldering detection of a wide wavelength range from 350 nm to Material categorization: For definitions of compliance 2 1120 nm. The photo sensitive area of the chip is 0.23 mm . please see www.vishay.com/doc 99912 APPLICATIONS High speed photo detector Light curtain Detector for optical switch PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD2523SLX01 10 35 350 to 1120 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD2523SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow solder profile fig. 7 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA Rev. 1.0, 05-Apr-13 Document Number: 84164 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VEMD2523SLX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1V F F Breakdown voltage I = 100 A, E = 0 V 32 V R (BR) Reverse dark current V = 10 V, E = 0 I 110 nA R ro V = 0 V, f = 1 MHz, E = 0 C 4pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C 1.3 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 10 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 710 14 A e R ra Angle of half sensitivity 35 deg Wavelength of peak sensitivity 900 nm p Range of spectral bandwidth 350 to 1120 nm 0.1 Rise time V = 10 V, R = 1 k , = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k , = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 V = 5 V R 100 10 10 1 V = 10 V R 1 0.1 20 40 60 80 100 0.01 0.1 1 10 2 T - Ambient Temperature (C) 94 8427 E - Irradiance (mW/cm ) amb e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 8 1.4 V = 5 V 6 1.2 R = 950 nm E = 0 f = 1 MHz 4 1.0 2 0.8 0 0.6 1 20 40 80 100 0.1 10 100 0 60 94 8430 V - Reverse Voltage (V) 94 8416 T - Ambient Temperature (C) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.0, 05-Apr-13 Document Number: 84164 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra, rel I - Reverse Dark Current (nA) ro I - Reverse Light Current (A) C - Diode Capacitance (pF) ra D